Perovskite-based solar cells with inorganic inverted hybrid planar heterojunction structure

Wei-Chi Lai, Kun Wei Lin, Tzung-Fang Guo, Chao-Yu Chen, Yuan Yu Liao

研究成果: Article

5 引文 (Scopus)

摘要

We demonstrated the good performance of inorganic inverted CH 3 NH 3 PbI 3 perovskite-based solar cells (SCs) with glass/ITO/NiO x /CH 3 NH 3 PbI 3 perovskite/C 60 / room temperature (RT)-sputtered ZnO/Al structure. We adopted spin coating and RT sputtering for the deposition of NiO x and ZnO, respectively. The inorganic hole and electron transport layer of NiO x and RT-sputtered ZnO, respectively, could improve the open-circuit voltage (V OC ), short-circuit current density (J SC ), and power conversion efficiency (η%) of the SCs. We obtained inorganic inverted CH 3 NH 3 PbI 3 perovskite-based SCs with a J SC of 21.96 A/cm 2 , a V OC of 1.02 V, a fill factor (FF%) of 68.2%, and an η% of 15.3% despite the sputtering damage of the RT-sputtered ZnO deposition. Moreover, the RT-sputtered ZnO could function as a diffusion barrier for Al, moisture, and O 2 . The inorganic inverted CH 3 NH 3 PbI 3 perovskite-based SCs demonstrated improved storage reliability.

原文English
文章編號015109
期刊AIP Advances
8
發行號1
DOIs
出版狀態Published - 2018 一月 1

指紋

heterojunctions
solar cells
methylidyne
room temperature
sputtering
short circuit currents
ITO (semiconductors)
open circuit voltage
moisture
coating
current density
damage
glass
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

引用此文

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abstract = "We demonstrated the good performance of inorganic inverted CH 3 NH 3 PbI 3 perovskite-based solar cells (SCs) with glass/ITO/NiO x /CH 3 NH 3 PbI 3 perovskite/C 60 / room temperature (RT)-sputtered ZnO/Al structure. We adopted spin coating and RT sputtering for the deposition of NiO x and ZnO, respectively. The inorganic hole and electron transport layer of NiO x and RT-sputtered ZnO, respectively, could improve the open-circuit voltage (V OC ), short-circuit current density (J SC ), and power conversion efficiency (η{\%}) of the SCs. We obtained inorganic inverted CH 3 NH 3 PbI 3 perovskite-based SCs with a J SC of 21.96 A/cm 2 , a V OC of 1.02 V, a fill factor (FF{\%}) of 68.2{\%}, and an η{\%} of 15.3{\%} despite the sputtering damage of the RT-sputtered ZnO deposition. Moreover, the RT-sputtered ZnO could function as a diffusion barrier for Al, moisture, and O 2 . The inorganic inverted CH 3 NH 3 PbI 3 perovskite-based SCs demonstrated improved storage reliability.",
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AU - Lai, Wei-Chi

AU - Lin, Kun Wei

AU - Guo, Tzung-Fang

AU - Chen, Chao-Yu

AU - Liao, Yuan Yu

PY - 2018/1/1

Y1 - 2018/1/1

N2 - We demonstrated the good performance of inorganic inverted CH 3 NH 3 PbI 3 perovskite-based solar cells (SCs) with glass/ITO/NiO x /CH 3 NH 3 PbI 3 perovskite/C 60 / room temperature (RT)-sputtered ZnO/Al structure. We adopted spin coating and RT sputtering for the deposition of NiO x and ZnO, respectively. The inorganic hole and electron transport layer of NiO x and RT-sputtered ZnO, respectively, could improve the open-circuit voltage (V OC ), short-circuit current density (J SC ), and power conversion efficiency (η%) of the SCs. We obtained inorganic inverted CH 3 NH 3 PbI 3 perovskite-based SCs with a J SC of 21.96 A/cm 2 , a V OC of 1.02 V, a fill factor (FF%) of 68.2%, and an η% of 15.3% despite the sputtering damage of the RT-sputtered ZnO deposition. Moreover, the RT-sputtered ZnO could function as a diffusion barrier for Al, moisture, and O 2 . The inorganic inverted CH 3 NH 3 PbI 3 perovskite-based SCs demonstrated improved storage reliability.

AB - We demonstrated the good performance of inorganic inverted CH 3 NH 3 PbI 3 perovskite-based solar cells (SCs) with glass/ITO/NiO x /CH 3 NH 3 PbI 3 perovskite/C 60 / room temperature (RT)-sputtered ZnO/Al structure. We adopted spin coating and RT sputtering for the deposition of NiO x and ZnO, respectively. The inorganic hole and electron transport layer of NiO x and RT-sputtered ZnO, respectively, could improve the open-circuit voltage (V OC ), short-circuit current density (J SC ), and power conversion efficiency (η%) of the SCs. We obtained inorganic inverted CH 3 NH 3 PbI 3 perovskite-based SCs with a J SC of 21.96 A/cm 2 , a V OC of 1.02 V, a fill factor (FF%) of 68.2%, and an η% of 15.3% despite the sputtering damage of the RT-sputtered ZnO deposition. Moreover, the RT-sputtered ZnO could function as a diffusion barrier for Al, moisture, and O 2 . The inorganic inverted CH 3 NH 3 PbI 3 perovskite-based SCs demonstrated improved storage reliability.

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