Perovskite-based solar cells with nickel-oxidized nickel oxide hole transfer layer

Wei Chih Lai, Kun Wei Lin, Tzung Fang Guo, Jung Lee

研究成果: Article

21 引文 (Scopus)

摘要

We demonstrated the methylammonium lead iodide (CH3NH3PbI3) perovskite-based solar cells (SCs) with nickel (Ni)-oxidized nickel oxide (NiOx) hole transport layer. The CH3NH3PbI3 perovskite-based SCs with Ni-oxidized NiOx have better short-circuit current density ( JSC), open circuit voltage (VOC), and conversion efficiency (η%) than poly(3,4- ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS). In addition, the transmittance and work function increased with increasing oxidation temperature of Ni-oxidized NiOx layer. The larger transmittance and work function of Ni-oxidized NiOx could result in less light absorption and hole transport energy loss, respectively. Furthermore, Ni-oxidized NiOx at 450 °C shows the smoothest surface morphology, which could result in the spin-coated CH3NH3PbI3 perovskite film to have better crystal quality. Therefore, the SCs with 450 °C Ni-oxidized NiOx hole transport show the largest η% of 7.75% that is ∼1.78 times larger than that of SCs with PEDOT:PSS hole transport layer.

原文English
文章編號7072522
頁(從 - 到)1590-1595
頁數6
期刊IEEE Transactions on Electron Devices
62
發行號5
DOIs
出版狀態Published - 2015 五月 1

指紋

Nickel oxide
Nickel
Perovskite
Solar cells
Volatile organic compounds
Conversion efficiency
Iodides
Open circuit voltage
Short circuit currents
Light absorption
Surface morphology
nickel monoxide
perovskite
Energy dissipation
Current density
Lead
Oxidation
Crystals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此文

@article{71129314069a472a8123f6c3b9e0904d,
title = "Perovskite-based solar cells with nickel-oxidized nickel oxide hole transfer layer",
abstract = "We demonstrated the methylammonium lead iodide (CH3NH3PbI3) perovskite-based solar cells (SCs) with nickel (Ni)-oxidized nickel oxide (NiOx) hole transport layer. The CH3NH3PbI3 perovskite-based SCs with Ni-oxidized NiOx have better short-circuit current density ( JSC), open circuit voltage (VOC), and conversion efficiency (η{\%}) than poly(3,4- ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS). In addition, the transmittance and work function increased with increasing oxidation temperature of Ni-oxidized NiOx layer. The larger transmittance and work function of Ni-oxidized NiOx could result in less light absorption and hole transport energy loss, respectively. Furthermore, Ni-oxidized NiOx at 450 °C shows the smoothest surface morphology, which could result in the spin-coated CH3NH3PbI3 perovskite film to have better crystal quality. Therefore, the SCs with 450 °C Ni-oxidized NiOx hole transport show the largest η{\%} of 7.75{\%} that is ∼1.78 times larger than that of SCs with PEDOT:PSS hole transport layer.",
author = "Lai, {Wei Chih} and Lin, {Kun Wei} and Guo, {Tzung Fang} and Jung Lee",
year = "2015",
month = "5",
day = "1",
doi = "10.1109/TED.2015.2413671",
language = "English",
volume = "62",
pages = "1590--1595",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",

}

Perovskite-based solar cells with nickel-oxidized nickel oxide hole transfer layer. / Lai, Wei Chih; Lin, Kun Wei; Guo, Tzung Fang; Lee, Jung.

於: IEEE Transactions on Electron Devices, 卷 62, 編號 5, 7072522, 01.05.2015, p. 1590-1595.

研究成果: Article

TY - JOUR

T1 - Perovskite-based solar cells with nickel-oxidized nickel oxide hole transfer layer

AU - Lai, Wei Chih

AU - Lin, Kun Wei

AU - Guo, Tzung Fang

AU - Lee, Jung

PY - 2015/5/1

Y1 - 2015/5/1

N2 - We demonstrated the methylammonium lead iodide (CH3NH3PbI3) perovskite-based solar cells (SCs) with nickel (Ni)-oxidized nickel oxide (NiOx) hole transport layer. The CH3NH3PbI3 perovskite-based SCs with Ni-oxidized NiOx have better short-circuit current density ( JSC), open circuit voltage (VOC), and conversion efficiency (η%) than poly(3,4- ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS). In addition, the transmittance and work function increased with increasing oxidation temperature of Ni-oxidized NiOx layer. The larger transmittance and work function of Ni-oxidized NiOx could result in less light absorption and hole transport energy loss, respectively. Furthermore, Ni-oxidized NiOx at 450 °C shows the smoothest surface morphology, which could result in the spin-coated CH3NH3PbI3 perovskite film to have better crystal quality. Therefore, the SCs with 450 °C Ni-oxidized NiOx hole transport show the largest η% of 7.75% that is ∼1.78 times larger than that of SCs with PEDOT:PSS hole transport layer.

AB - We demonstrated the methylammonium lead iodide (CH3NH3PbI3) perovskite-based solar cells (SCs) with nickel (Ni)-oxidized nickel oxide (NiOx) hole transport layer. The CH3NH3PbI3 perovskite-based SCs with Ni-oxidized NiOx have better short-circuit current density ( JSC), open circuit voltage (VOC), and conversion efficiency (η%) than poly(3,4- ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS). In addition, the transmittance and work function increased with increasing oxidation temperature of Ni-oxidized NiOx layer. The larger transmittance and work function of Ni-oxidized NiOx could result in less light absorption and hole transport energy loss, respectively. Furthermore, Ni-oxidized NiOx at 450 °C shows the smoothest surface morphology, which could result in the spin-coated CH3NH3PbI3 perovskite film to have better crystal quality. Therefore, the SCs with 450 °C Ni-oxidized NiOx hole transport show the largest η% of 7.75% that is ∼1.78 times larger than that of SCs with PEDOT:PSS hole transport layer.

UR - http://www.scopus.com/inward/record.url?scp=85028194290&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85028194290&partnerID=8YFLogxK

U2 - 10.1109/TED.2015.2413671

DO - 10.1109/TED.2015.2413671

M3 - Article

AN - SCOPUS:85028194290

VL - 62

SP - 1590

EP - 1595

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 5

M1 - 7072522

ER -