@inproceedings{c77162142fe44b6aaa50eb7ca03a168b,
title = "Perspective of tunnel-FET for future low-power technology nodes",
abstract = "Theoretically, confined heterostructure p(-n)-i-n (n(-p)-i-p) TFETs are promising candidates for future low-power applications, with n-TFET outperforming p-TFET. An optimal body thickness of about 10nm is predicted for Ga0.5As0.5Sb-In0.53Ga0.47As n-TFET with I60=20μA/μm. For p-TFETs, stronger confinement may be required to avoid tunneling to the heavy-hole band. An unexploited domain is the insertion of thin heterostructure slabs offering a locally reduced dielectric constant, enhancing both SS and Ion.",
author = "Verhulst, \{A. S.\} and D. Verreck and Q. Smets and Kao, \{K. H.\} and \{Van De Put\}, M. and R. Rooyackers and B. Sor{\'e}e and A. Vandooren and \{De Meyer\}, K. and G. Groeseneken and Heyns, \{M. M.\} and A. Mocuta and N. Collaert and Thean, \{A. V.Y.\}",
year = "2015",
month = feb,
day = "20",
doi = "10.1109/IEDM.2014.7047140",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "February",
pages = "30.2.1--30.2.4",
booktitle = "2014 IEEE International Electron Devices Meeting, IEDM 2014",
address = "United States",
edition = "February",
note = "2014 60th IEEE International Electron Devices Meeting, IEDM 2014 ; Conference date: 15-12-2014 Through 17-12-2014",
}