Phase-Engineered PtSe2-Layered Films by a Plasma-Assisted Selenization Process toward All PtSe2-Based Field Effect Transistor to Highly Sensitive, Flexible, and Wide-Spectrum Photoresponse Photodetectors

Teng Yu Su, Henry Medina, Yu Ze Chen, Sheng Wen Wang, Shao Shin Lee, Yu Chuan Shih, Chia Wei Chen, Hao Chung Kuo, Feng Chuan Chuang, Yu Lun Chueh

研究成果: Article同行評審

57 引文 斯高帕斯(Scopus)

摘要

The formation of PtSe2-layered films is reported in a large area by the direct plasma-assisted selenization of Pt films at a low temperature, where temperatures, as low as 100 °C at the applied plasma power of 400 W can be achieved. As the thickness of the Pt film exceeds 5 nm, the PtSe2-layered film (five monolayers) exhibits a metallic behavior. A clear p-type semiconducting behavior of the PtSe2-layered film (≈trilayers) is observed with the average field effective mobility of 0.7 cm2 V−1 s−1 from back-gated transistor measurements as the thickness of the Pt film reaches below 2.5 nm. A full PtSe2 field effect transistor is demonstrated where the thinner PtSe2, exhibiting a semiconducting behavior, is used as the channel material, and the thicker PtSe2, exhibiting a metallic behavior, is used as an electrode, yielding an ohmic contact. Furthermore, photodetectors using a few PtSe2-layered films as an adsorption layer synthesized at the low temperature on a flexible substrate exhibit a wide range of absorption and photoresponse with the highest photocurrent of 9 µA under the laser wavelength of 408 nm. In addition, the device can maintain a high photoresponse under a large bending stress and 1000 bending cycles.

原文English
文章編號1800032
期刊Small
14
發行號19
DOIs
出版狀態Published - 2018 5月 9

All Science Journal Classification (ASJC) codes

  • 生物技術
  • 生物材料
  • 化學 (全部)
  • 材料科學(全部)

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