Phase transformation of tantalum on different dielectric films with plasma treatment

Chun Chieh Huang, Ying Lang Wang, Shih Chieh Chang, Gwo Jen Hwang, Jow Lay Huang

研究成果: Conference article同行評審

4 引文 斯高帕斯(Scopus)

摘要

A preferred low-resistivity α-phase tantalum (Ta) film is directly obtained on a carbon doped oxide (SiOCH) substrate, which is treated by 5% H2/He mixed gas plasma for 300 s, while a β-phase Ta film is formed on fluorine silicate glass, silicon oxynitride and plasma-enhanced chemical vapor oxide substrates irrespective of the plasma treatment. The phase transformation and the resistivity change of the Ta films on the SiOCH films with respect to the plasma treatment time are investigated by X-ray diffraction analysis. Moreover, the results of X-ray photoelectron spectroscopy indicate that the formation of α-Ta is dependent on the surface composition of the SiOCH substrates.

原文English
頁(從 - 到)286-288
頁數3
期刊Thin Solid Films
498
發行號1-2
DOIs
出版狀態Published - 2006 三月 1
事件Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD -
持續時間: 2004 十一月 122004 十一月 14

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學

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