Phosphor-free GaN-based transverse junction light emitting diodes for the generation of white light

J. W. Shi, H. Y. Huang, C. K. Wang, J. K. Sheu, W. C. Lai, Y. S. Wu, C. H. Chen, J. T. Chu, H. C. Kuo, Wei Ping Lin, Tsung Hsun Yang, J. I. Chyi

研究成果: Article同行評審

20 引文 斯高帕斯(Scopus)

摘要

We demonstrate a GaN-based phosphor-free near-white-light light-emitting-diode (LED) structure that operates in the visible wavelengths and offers broadening and flattening optical bandwidth performance. The incorporation of GaN-based dual wavelengths (blue and green) multiple-quantum-wells with a transverse p-n junction produces a device which can directly generate stable and near visible white-light emissions. The shape of the optical spectra (440-560 nm) are invariable from low to very high levels of bias currents. The problems of nonuniform carrier distribution and bias dependent electroluminescence spectra that occur in traditional phosphor-free white-light or near-white-light LEDs (with vertical p-n junctions) are eliminated by the demonstrated structure.

原文English
頁(從 - 到)2593-2595
頁數3
期刊IEEE Photonics Technology Letters
18
發行號24
DOIs
出版狀態Published - 2006 十二月 15

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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