Photodetector of ZnO nanowires based on through-silicon via approach

Yi Hao Chen; I. Tzu Huang; Shoou Jinn Chang; Ting Jen Hsueh

doi:10.1109/IITC-AMC.2016.7507704

Photodetector of ZnO nanowires based on through-silicon via approach

Yi Hao Chen, I. Tzu Huang, Shoou Jinn Chang, Ting Jen Hsueh

研究成果: Conference contribution

摘要

A ZnO-nanowire photodetector was prepared using three-dimensional through silicon via (TSV) technology. The diameter and depth of the Si via were about 80 μm and 175μm, respectively. Cu uniformly filled in each TSV, whose average resistance was about 1 mΩ. Upon illumination with UV light (= 330 nm), it was found that measured responsivities is 7.38×10-3 A/W for the 3D TSV ZnO nanowire photodetector biased at 8 V. Furthermore, a rejection ratio of approximately 170 was obtained for the 3D TSV ZnO nanowire photodetector with an applied bias of 8 V.

原文	English
主出版物標題	2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	123-124
頁數	2
ISBN（電子）	9781509003860
DOIs	https://doi.org/10.1109/IITC-AMC.2016.7507704
出版狀態	Published - 2016 7月 8
事件	2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016 - San Jose, United States 持續時間: 2016 5月 23 → 2016 5月 26

出版系列

名字	2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016

Other

Other	2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016
國家/地區	United States
城市	San Jose
期間	16-05-23 → 16-05-26

All Science Journal Classification (ASJC) codes

硬體和架構
電氣與電子工程
電子、光磁材料
金屬和合金
表面、塗料和薄膜

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10.1109/IITC-AMC.2016.7507704

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引用此

Chen, Y. H., Huang, I. T., Chang, S. J., & Hsueh, T. J. (2016). Photodetector of ZnO nanowires based on through-silicon via approach. 於 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016 (頁 123-124). 文章 7507704 (2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IITC-AMC.2016.7507704

Chen, Yi Hao ; Huang, I. Tzu ; Chang, Shoou Jinn 等. / Photodetector of ZnO nanowires based on through-silicon via approach. 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 頁 123-124 (2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016).

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title = "Photodetector of ZnO nanowires based on through-silicon via approach",

abstract = "A ZnO-nanowire photodetector was prepared using three-dimensional through silicon via (TSV) technology. The diameter and depth of the Si via were about 80 μm and 175μm, respectively. Cu uniformly filled in each TSV, whose average resistance was about 1 mΩ. Upon illumination with UV light (= 330 nm), it was found that measured responsivities is 7.38×10-3 A/W for the 3D TSV ZnO nanowire photodetector biased at 8 V. Furthermore, a rejection ratio of approximately 170 was obtained for the 3D TSV ZnO nanowire photodetector with an applied bias of 8 V.",

author = "Chen, {Yi Hao} and Huang, {I. Tzu} and Chang, {Shoou Jinn} and Hsueh, {Ting Jen}",

note = "Funding Information: Ministry of Science and Technology, Taiwan (104GE05, 103-2221-E-492-047-MY3); National Nano Devices Laboratories, Tainan, Taiwan, Republic of China, Taiwan. Publisher Copyright: {\textcopyright} 2016 IEEE.; 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016 ; Conference date: 23-05-2016 Through 26-05-2016",

year = "2016",

month = jul,

day = "8",

doi = "10.1109/IITC-AMC.2016.7507704",

language = "English",

series = "2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016",

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pages = "123--124",

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Chen, YH, Huang, IT, Chang, SJ & Hsueh, TJ 2016, Photodetector of ZnO nanowires based on through-silicon via approach. 於 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016., 7507704, 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016, Institute of Electrical and Electronics Engineers Inc., 頁 123-124, 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016, San Jose, United States, 16-05-23. https://doi.org/10.1109/IITC-AMC.2016.7507704

Photodetector of ZnO nanowires based on through-silicon via approach. / Chen, Yi Hao; Huang, I. Tzu; Chang, Shoou Jinn 等.
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 123-124 7507704 (2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016).

研究成果: Conference contribution

TY - GEN

T1 - Photodetector of ZnO nanowires based on through-silicon via approach

AU - Chen, Yi Hao

AU - Huang, I. Tzu

AU - Chang, Shoou Jinn

AU - Hsueh, Ting Jen

N1 - Funding Information: Ministry of Science and Technology, Taiwan (104GE05, 103-2221-E-492-047-MY3); National Nano Devices Laboratories, Tainan, Taiwan, Republic of China, Taiwan. Publisher Copyright: © 2016 IEEE.

PY - 2016/7/8

Y1 - 2016/7/8

N2 - A ZnO-nanowire photodetector was prepared using three-dimensional through silicon via (TSV) technology. The diameter and depth of the Si via were about 80 μm and 175μm, respectively. Cu uniformly filled in each TSV, whose average resistance was about 1 mΩ. Upon illumination with UV light (= 330 nm), it was found that measured responsivities is 7.38×10-3 A/W for the 3D TSV ZnO nanowire photodetector biased at 8 V. Furthermore, a rejection ratio of approximately 170 was obtained for the 3D TSV ZnO nanowire photodetector with an applied bias of 8 V.

AB - A ZnO-nanowire photodetector was prepared using three-dimensional through silicon via (TSV) technology. The diameter and depth of the Si via were about 80 μm and 175μm, respectively. Cu uniformly filled in each TSV, whose average resistance was about 1 mΩ. Upon illumination with UV light (= 330 nm), it was found that measured responsivities is 7.38×10-3 A/W for the 3D TSV ZnO nanowire photodetector biased at 8 V. Furthermore, a rejection ratio of approximately 170 was obtained for the 3D TSV ZnO nanowire photodetector with an applied bias of 8 V.

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M3 - Conference contribution

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BT - 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 23 May 2016 through 26 May 2016

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Chen YH, Huang IT, Chang SJ, Hsueh TJ. Photodetector of ZnO nanowires based on through-silicon via approach. 於 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 123-124. 7507704. (2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016). doi: 10.1109/IITC-AMC.2016.7507704

Photodetector of ZnO nanowires based on through-silicon via approach

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