Photodetector of ZnO nanowires based on through-silicon via approach

Yi Hao Chen, I. Tzu Huang, Shoou Jinn Chang, Ting Jen Hsueh

研究成果: Conference contribution

摘要

A ZnO-nanowire photodetector was prepared using three-dimensional through silicon via (TSV) technology. The diameter and depth of the Si via were about 80 μm and 175μm, respectively. Cu uniformly filled in each TSV, whose average resistance was about 1 mΩ. Upon illumination with UV light (= 330 nm), it was found that measured responsivities is 7.38×10-3 A/W for the 3D TSV ZnO nanowire photodetector biased at 8 V. Furthermore, a rejection ratio of approximately 170 was obtained for the 3D TSV ZnO nanowire photodetector with an applied bias of 8 V.

原文English
主出版物標題2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016
發行者Institute of Electrical and Electronics Engineers Inc.
頁面123-124
頁數2
ISBN(電子)9781509003860
DOIs
出版狀態Published - 2016 七月 8
事件2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016 - San Jose, United States
持續時間: 2016 五月 232016 五月 26

出版系列

名字2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016

Other

Other2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016
國家United States
城市San Jose
期間16-05-2316-05-26

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys
  • Surfaces, Coatings and Films

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