Photoelectron spectroscopic investigation of InN and InN/GaN heterostructures

C. F. Shih, N. C. Chen, C. Y. Tseng

研究成果: Letter同行評審

13 引文 斯高帕斯(Scopus)

摘要

The surface band diagram of InN and band structure of the InN/GaN interface were studied using ultraviolet photoemissive yield spectroscopy and X-ray photoemission spectroscopy (XPS). The surface work function and the difference between the Fermi level and the conduction band minimum of InN were determined by ultraviolet photoemissive yield measurement. The band offsets and surface band bending were determined using XPS. Both spectra proposed downward band bending of the InN surface. Moreover, the Schottky barrier height (SBH) of the InN/GaN interface is determined (1.5 eV). Comparison of the measured SBH with our previous results by electrical measurement is discussed. The physical quantities derived in this work provide important information for use in future studies of InN and InN/GaN heterostructures.

原文English
頁(從 - 到)5016-5019
頁數4
期刊Thin Solid Films
516
發行號15
DOIs
出版狀態Published - 2008 6月 2

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學

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