Photoluminescence behavior of Ti-doped Zn2SiO4 thin film phosphors

C. M. Lin, Yi Sheng Lai, J. S. Chen

研究成果: Conference article同行評審

4 引文 斯高帕斯(Scopus)

摘要

This work investigates the luminescent properties and structure of Zn 2SiO4:Ti thin-film phosphor, before and after annealing up to 1000°C. The Zn2SiO4:Ti films are fabricated by RF sputtering using ceramic target. After annealing at 800°C the β-Zn 2SiO4 phase is formed, but this phase is not suitable for the application in electroluminescence. The willemite structure (α-Zn 2SiO4) is formed after annealing at 900°C or higher temperature. Concurrently, the Zn-O-Si bonding is observed by XPS analysis and it corresponds to the willemite structure. A broad PL peak locates at 386 nm is observed for the 700°C annealed Zn2SiO4:Ti film. However, three PL peaks, centered at 380 nm, 398 nm and 402 nm, can be observed in the 900°C annealed sample. All films exhibit a high transmission (>80%) in the visible spectrum, either before or after annealing. copyright The Electrochemical Society.

原文English
頁(從 - 到)1-6
頁數6
期刊ECS Transactions
1
發行號34
DOIs
出版狀態Published - 2006
事件Physics and Chemistry of Luminescent Materials XIV - 208th Electrochemical Society Meeting - Los Angeles, CA, United States
持續時間: 2005 十月 162005 十月 21

All Science Journal Classification (ASJC) codes

  • 工程 (全部)

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