Photoluminescence from SiGe/Si quantum dots with wavelength in the visible range

F. Y. Huang, Y. S. Tang, J. N. Duan, K. L. Wang

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

Photoluminescence from Si0.7Ge0.3/Si quantum dots with a wavelength in the visible range is reported. The SiGe/Si quantum dots were fabricated by electron beam lithography and reactive ion etching of an SiGe/Si superlattice. A photoluminescence spectrum was obtained between 4.2 K and room temperature. As the temperature increased, the photoluminescence intensity decreased, with the peak position shifting slightly to a higher energy. The photoluminescence persisted up to room temperature with its intensity ∼40% of that at 4.2 K.

原文English
頁(從 - 到)1736-1737
頁數2
期刊Electronics Letters
33
發行號20
DOIs
出版狀態Published - 1997 九月 25

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程

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