TY - JOUR
T1 - Photoluminescence of erbium implanted in SiGe
AU - Chang, S. J.
AU - Nayak, D. K.
AU - Shiraki, Y.
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 1996
Y1 - 1996
N2 - The optical properties of an Er-implanted SiGe sample have been studied. Sharp and temperature-stable Er-related PL peaks were observed at around 1.5 μm, which correspond to the Er 4I13/2 to 4I15/2 transition. It was found that the Er ions form more than three noncubic luminescence centers in the SiGe host. Although the PL intensity quenches at high temperatures, the Er-related PL signal can still be observed at room temperature. For a Si0.87Ge0.13:Er sample annealed at 850°C for 20 min, the activation energy is 130 meV which is slightly smaller than that of the Er-doped Si.
AB - The optical properties of an Er-implanted SiGe sample have been studied. Sharp and temperature-stable Er-related PL peaks were observed at around 1.5 μm, which correspond to the Er 4I13/2 to 4I15/2 transition. It was found that the Er ions form more than three noncubic luminescence centers in the SiGe host. Although the PL intensity quenches at high temperatures, the Er-related PL signal can still be observed at room temperature. For a Si0.87Ge0.13:Er sample annealed at 850°C for 20 min, the activation energy is 130 meV which is slightly smaller than that of the Er-doped Si.
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U2 - 10.1557/proc-422-131
DO - 10.1557/proc-422-131
M3 - Conference article
AN - SCOPUS:0030409738
VL - 422
SP - 131
EP - 136
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
SN - 0272-9172
T2 - Proceedings of the 1996 MRS Spring Symposium
Y2 - 8 April 1996 through 11 April 1996
ER -