The optical properties of an Er-implanted SiGe sample have been studied. Sharp and temperature-stable Er-related PL peaks were observed at around 1.5 μm, which correspond to the Er 4I13/2 to 4I15/2 transition. It was found that the Er ions form more than three noncubic luminescence centers in the SiGe host. Although the PL intensity quenches at high temperatures, the Er-related PL signal can still be observed at room temperature. For a Si0.87Ge0.13:Er sample annealed at 850°C for 20 min, the activation energy is 130 meV which is slightly smaller than that of the Er-doped Si.
|頁（從 - 到）||131-136|
|期刊||Materials Research Society Symposium - Proceedings|
|出版狀態||Published - 1996|
|事件||Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA|
持續時間: 1996 四月 8 → 1996 四月 11
All Science Journal Classification (ASJC) codes