Photoluminescence of erbium implanted in SiGe

S. J. Chang, D. K. Nayak, Y. Shiraki

研究成果: Conference article同行評審

1 引文 斯高帕斯(Scopus)

摘要

The optical properties of an Er-implanted SiGe sample have been studied. Sharp and temperature-stable Er-related PL peaks were observed at around 1.5 μm, which correspond to the Er 4I13/2 to 4I15/2 transition. It was found that the Er ions form more than three noncubic luminescence centers in the SiGe host. Although the PL intensity quenches at high temperatures, the Er-related PL signal can still be observed at room temperature. For a Si0.87Ge0.13:Er sample annealed at 850°C for 20 min, the activation energy is 130 meV which is slightly smaller than that of the Er-doped Si.

原文English
頁(從 - 到)131-136
頁數6
期刊Materials Research Society Symposium - Proceedings
422
DOIs
出版狀態Published - 1996
事件Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
持續時間: 1996 四月 81996 四月 11

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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