Photoluminescence of erbium implanted in sige

Shoou Jinn Chang, Deepak K. Nayak, Yasuhiro Shiraki

研究成果: Article同行評審

摘要

The optical properties of an Er-implanted SiGe sample have been studied. Sharp and temperature-stable Er- related photoluminescence (PL) peaks were observed at around 1.5 jum, which correspond to the Er 4Ii3/2 to 4Iis/2 transition. It was found that the Er ions form more than three noncubic luminescence centers in the SiGe host. Although the PL intensity quenches at high temperatures, the Er-related PL signal can still be observed at room temperature. For a Sio.87Geo.i3-Er sample annealed at 850°C for 20 min, the activation energy is 130 meV which is slightly smaller than that of the Er-doped Si.

原文English
頁(從 - 到)5633-5636
頁數4
期刊Japanese Journal of Applied Physics
34
發行號10
DOIs
出版狀態Published - 1995 十月

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學 (全部)

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