Photoluminescence spectroscopy of Mg-doped GaN

J. K. Sheu, Y. K. Su, G. C. Chi, B. J. Pong, C. Y. Chen, C. N. Huang, W. C. Chen

研究成果: Article同行評審

57 引文 斯高帕斯(Scopus)

摘要

We have grown Mg-doped GaN films by metalorganic chemical vapor deposition with various CP2Mg flow rates. After 750 °C postgrowth annealing, p-type GaN films with carrier concentrations and mobilities about 2 X 1017/cm3 and 10 cm2/V s, respectively, have been achieved. A dominant photoluminescence (PL) line around 2.9 eV was observed at room temperature. By studying the dependence of PL on excitation density at 20 K, the emission line around 2.95 eV can be attributed to a donor-to-acceptor pair transition rather than to a conduction band-to-impurity transition involving the Mg-related deep level. We suggest that the DAP transition line is caused by a Mg related deep level at about 510 meV above the valence band. It is much deeper than the acceptor level at 250 meV commonly produced by the Mg dopants.

原文English
頁(從 - 到)4590-4594
頁數5
期刊Journal of Applied Physics
84
發行號8
DOIs
出版狀態Published - 1998 十月 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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