Photon-assisted cryoetching of III-V binary compounds by Cl2 at 193 nm

J. L. Lin, M. B. Freiler, M. Levy, R. M. Osgood, D. Collins, T. C. McGill

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

We compare low-temperature, excimer-laser-induced etching of GaAs, GaSb, InAs, and InSb surfaces covered with 1-2 monolayers of condensed Cl2. The etch properties and a relative etch rate of GaAs∼GaSb<InAs<InSb are obtained. In addition, the etch rate of GaSb is characterized as a function of various system parameters, i.e., substrate temperature, chlorine pressure, and laser fluence. Spatially well resolved, anisotropic etching of 0.5 μm features has been achieved.

原文English
頁(從 - 到)3563
頁數1
期刊Applied Physics Letters
67
DOIs
出版狀態Published - 1995

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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