Photonic performance of Si nanocluster grown by laser assistance

研究成果: Conference contribution

摘要

A CO2 laser was used in a conventional plasma-enhanced chemical vapor deposition system to assist the decomposition of SiH4 molecules and also to separate the Si clusters from Si oxide matrix. Varying growth gas ratio caused the observed photoluminescence (PL) light emission to vary from 1.65eV to 1.92eV without post-annealing. A degradation of photoluminescence (PL) intensity by irradiating the sample with helium-cadmium (He-Cd) laser was observed. The dependence of PL degradation on long-term irradiation of He-Cd laser was investigated. Post-annealing in H2 could also help to increase the PL intensity plays by passivating the defect centers in as-deposited samples.

原文English
主出版物標題Emerging Information Technology Conference 2005
頁面188-192
頁數5
DOIs
出版狀態Published - 2005 十二月 1
事件Emerging Information Technology Conference 2005 - Taipei, Taiwan
持續時間: 2005 八月 152005 八月 16

出版系列

名字Emerging Information Technology Conference 2005
2005

Other

OtherEmerging Information Technology Conference 2005
國家Taiwan
城市Taipei
期間05-08-1505-08-16

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • 引用此

    Lee, C. T. (2005). Photonic performance of Si nanocluster grown by laser assistance. 於 Emerging Information Technology Conference 2005 (頁 188-192). [1544384] (Emerging Information Technology Conference 2005; 卷 2005). https://doi.org/10.1109/EITC.2005.1544384