Photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor

Wei Chou Wang, Hsi Jen Pan, Kong Beng Thei, Kun Wei Lin, Kuo Hui Yu, Chin Chuan Cheng, Shiou Ying Cheng, Wen-Chau Liu

研究成果: Article

摘要

A novel photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor (NDR-HBT) is fabricated and demonstrated. Due to the appropriately designed narrow base width and the employment of a δ-doped sheet at the emitter-base (E-B) heterojunction, the base resistance effect results in the significant NDR phenomenon. In addition, the experimental results show that the device studied is very sensitive to the applied light source. The N-shaped NDR phenomena are clearly observed under illumination. This phenomenon is attributed to the base resistance and barrier lowering effect resulting from holes induced by the applied light source.

原文English
頁(從 - 到)359-365
頁數7
期刊Superlattices and Microstructures
29
發行號5
DOIs
出版狀態Published - 2001 一月 1

指紋

Heterojunction bipolar transistors
bipolar transistors
Photonics
Light sources
heterojunctions
photonics
light sources
Heterojunctions
Lighting
emitters
illumination

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

引用此文

Wang, Wei Chou ; Pan, Hsi Jen ; Thei, Kong Beng ; Lin, Kun Wei ; Yu, Kuo Hui ; Cheng, Chin Chuan ; Cheng, Shiou Ying ; Liu, Wen-Chau. / Photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor. 於: Superlattices and Microstructures. 2001 ; 卷 29, 編號 5. 頁 359-365.
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abstract = "A novel photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor (NDR-HBT) is fabricated and demonstrated. Due to the appropriately designed narrow base width and the employment of a δ-doped sheet at the emitter-base (E-B) heterojunction, the base resistance effect results in the significant NDR phenomenon. In addition, the experimental results show that the device studied is very sensitive to the applied light source. The N-shaped NDR phenomena are clearly observed under illumination. This phenomenon is attributed to the base resistance and barrier lowering effect resulting from holes induced by the applied light source.",
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Photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor. / Wang, Wei Chou; Pan, Hsi Jen; Thei, Kong Beng; Lin, Kun Wei; Yu, Kuo Hui; Cheng, Chin Chuan; Cheng, Shiou Ying; Liu, Wen-Chau.

於: Superlattices and Microstructures, 卷 29, 編號 5, 01.01.2001, p. 359-365.

研究成果: Article

TY - JOUR

T1 - Photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor

AU - Wang, Wei Chou

AU - Pan, Hsi Jen

AU - Thei, Kong Beng

AU - Lin, Kun Wei

AU - Yu, Kuo Hui

AU - Cheng, Chin Chuan

AU - Cheng, Shiou Ying

AU - Liu, Wen-Chau

PY - 2001/1/1

Y1 - 2001/1/1

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AB - A novel photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor (NDR-HBT) is fabricated and demonstrated. Due to the appropriately designed narrow base width and the employment of a δ-doped sheet at the emitter-base (E-B) heterojunction, the base resistance effect results in the significant NDR phenomenon. In addition, the experimental results show that the device studied is very sensitive to the applied light source. The N-shaped NDR phenomena are clearly observed under illumination. This phenomenon is attributed to the base resistance and barrier lowering effect resulting from holes induced by the applied light source.

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