Photoreflectance Studies of Ga0.5In0.5P/GaAs Heterostructures Grown by Metalorganic Chemical Vapor Deposition Technique

Jenn Shyong Hwang, Zhijiang Hang, Shin Long Tyan, Sheng Wei Ding, Jen Hsiung Tung, Chin Yuan Chen, Biing Jye Lee, Jung Tsung Hsu

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

Photoreflectance was used to study lattice-matched Ga0.5In0.5P/GaAs heterostructures grown using metalorganic chemical vapor deposition. The built-in electric field in the GaAs region at the Ga0.5In0.5P/GaAs interface was evaluated using the observed Franz-Keldysh oscillations. The fundamental energy gaps, Eo and Eoo, of Ga0.5In0.5P were also determined. In addition, we found that as the doping concentration of the Ga0.5In0.5P increased, the broadening parameters of the band gap also increased.

原文English
頁(從 - 到)L571-L573
期刊Japanese Journal of Applied Physics
31
發行號5
DOIs
出版狀態Published - 1992 五月

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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