Photoreflectance studies of surface state density of InAlAs

J. S. Hwang, G. S. Chang, W. C. Hwang, W. J. Chen

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

The surface barrier height and surface Fermi level of InAlAs were investigated via photoreflectance spectra. Surface state density was then determined from the surface barrier height as a function of temperature, illumination power intensity, and intrinsic layer thickness. Results obtained from these three independent approaches all give the same conclusion, that the surface states are distributed over two separate regions within the energy band gap. Closely examining the photovoltage induced by various incident beam intensities revealed that the photovoltage effect is negligible when the illumination power intensity is below 1.0 μW/cm2.

原文English
頁(從 - 到)1771-1776
頁數6
期刊Journal of Applied Physics
89
發行號3
DOIs
出版狀態Published - 2001 2月 1

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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