Photoreflectance study of InN films with In and N polarities

Kuang I. Lin, Jung Tse Tsai, I. Cheng Su, Jenn Shyong Hwang, Shangjr Gwo

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

InN films with In and N polarities grown by molecular beam epitaxy are studied by photoreflectance (PR). No PR feature is observed at 293 K. At 50 K, for N-polar InN, a broad PR feature with Franz-Keldysh oscillations (FKOs) is observed. The surface electric field (312 kV/cm) and band gap (0.682 eV) are deduced from analyzing FKO extremes. However, some narrow PR features are observed for In-polar InN and three transition energies are obtained, but no FKO is observed. These indicate that the surface electric field (or surface band bending) of In-polar InN is smaller than that of N-polar InN.

原文English
文章編號112601
期刊Applied Physics Express
4
發行號11
DOIs
出版狀態Published - 2011 十一月 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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