Photoreflectance study of inp and gaas by metal organic chemical vapor deposition using tertiarybutylphosphine and tertiarybutylarsine sources

Hrong Kuan, Yan Kuin Su, Shoou Jinn Chang, Wen Jeng Tzou

研究成果: Article同行評審

摘要

Two metalorganic sources, tertiarybutylphosphine (TBP) and tertiarybutylarsipe (TBA), have been investigated for their possible use as precursors in the metalorganic chemical vapor deposition (MOCVD) process. The optical properties of epilayers were characterized by photoreflectance (PR) spectra. The V/III ratios were variedat a growth temperature of 600°C and growth pressure of 150 Torr. The broadening parameter Γ of GaAs at 300K PR was 11.35 meV. The room-temperature Γ value of InP PR measurement was about 11.46 meV.

原文English
頁(從 - 到)1831-1832
頁數2
期刊Japanese Journal of Applied Physics
34
發行號4R
DOIs
出版狀態Published - 1995 四月

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學 (全部)

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