Two metalorganic sources, tertiarybutylphosphine (TBP) and tertiarybutylarsipe (TBA), have been investigated for their possible use as precursors in the metalorganic chemical vapor deposition (MOCVD) process. The optical properties of epilayers were characterized by photoreflectance (PR) spectra. The V/III ratios were variedat a growth temperature of 600°C and growth pressure of 150 Torr. The broadening parameter Γ of GaAs at 300K PR was 11.35 meV. The room-temperature Γ value of InP PR measurement was about 11.46 meV.
All Science Journal Classification (ASJC) codes
- 工程 (全部)
- 物理與天文學 (全部)