Photoreflectance study of surface Fermi level in molecular beam epitaxial grown InAlAs heterostructures

J. S. Hwang; S. L. Tyan; W. Y. Chou; M. L. Lee; David Weyburne; Z. Hang; H. H. Lin; T. L. Lee

doi:10.1063/1.111294

Photoreflectance study of surface Fermi level in molecular beam epitaxial grown InAlAs heterostructures

J. S. Hwang
, S. L. Tyan
, W. Y. Chou
, M. L. Lee
, David Weyburne
, Z. Hang
, H. H. Lin
, T. L. Lee

研究成果: Article › 同行評審

18 引文斯高帕斯（Scopus）

摘要

We have studied the band gaps and the surface Fermi level positions of a series of In_1-xAl_xAs surface-intrinsic-n⁺ structures at room temperature by photoreflectance. Experiments demonstrated that over aluminum concentrations of 0.42-0.57, the surface Fermi level is not pinned at midgap, as commonly believed, but instead varies, respectively, from 0.50±0.01 to 0.81±0.01 eV below the conduction band edge.

原文	English
頁（從 - 到）	3314-3316
頁數	3
期刊	Applied Physics Letters
卷	64
發行號	24
DOIs	https://doi.org/10.1063/1.111294
出版狀態	Published - 1994

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

存取文件

10.1063/1.111294

其它文件與鏈接

Link to publication in Scopus

引用此

@article{80f3c3ff24c24092a9eadc5192eaf53b,

title = "Photoreflectance study of surface Fermi level in molecular beam epitaxial grown InAlAs heterostructures",

abstract = "We have studied the band gaps and the surface Fermi level positions of a series of In1-xAlxAs surface-intrinsic-n+ structures at room temperature by photoreflectance. Experiments demonstrated that over aluminum concentrations of 0.42-0.57, the surface Fermi level is not pinned at midgap, as commonly believed, but instead varies, respectively, from 0.50±0.01 to 0.81±0.01 eV below the conduction band edge.",

author = "Hwang, \{J. S.\} and Tyan, \{S. L.\} and Chou, \{W. Y.\} and Lee, \{M. L.\} and David Weyburne and Z. Hang and Lin, \{H. H.\} and Lee, \{T. L.\}",

year = "1994",

doi = "10.1063/1.111294",

language = "English",

volume = "64",

pages = "3314--3316",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Inc.",

number = "24",

}

TY - JOUR

T1 - Photoreflectance study of surface Fermi level in molecular beam epitaxial grown InAlAs heterostructures

AU - Hwang, J. S.

AU - Tyan, S. L.

AU - Chou, W. Y.

AU - Lee, M. L.

AU - Weyburne, David

AU - Hang, Z.

AU - Lin, H. H.

AU - Lee, T. L.

PY - 1994

Y1 - 1994

N2 - We have studied the band gaps and the surface Fermi level positions of a series of In1-xAlxAs surface-intrinsic-n+ structures at room temperature by photoreflectance. Experiments demonstrated that over aluminum concentrations of 0.42-0.57, the surface Fermi level is not pinned at midgap, as commonly believed, but instead varies, respectively, from 0.50±0.01 to 0.81±0.01 eV below the conduction band edge.

AB - We have studied the band gaps and the surface Fermi level positions of a series of In1-xAlxAs surface-intrinsic-n+ structures at room temperature by photoreflectance. Experiments demonstrated that over aluminum concentrations of 0.42-0.57, the surface Fermi level is not pinned at midgap, as commonly believed, but instead varies, respectively, from 0.50±0.01 to 0.81±0.01 eV below the conduction band edge.

UR - https://www.scopus.com/pages/publications/0028444199

UR - https://www.scopus.com/pages/publications/0028444199#tab=citedBy

U2 - 10.1063/1.111294

DO - 10.1063/1.111294

M3 - Article

AN - SCOPUS:0028444199

SN - 0003-6951

VL - 64

SP - 3314

EP - 3316

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Photoreflectance study of surface Fermi level in molecular beam epitaxial grown InAlAs heterostructures

摘要

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此