TY - JOUR
T1 - Physical and structural properties of RF magnetron sputtered ZnO films
AU - Chang, Ren Chuan
AU - Chu, Sheng Vuan
AU - Lo, Kuang Yao
AU - Lo, Shih Chieh
AU - Huang, Yi Ren
PY - 2005
Y1 - 2005
N2 - Poly-crystal zinc oxide thin films with c-axis orientation have been successfully grown on the silicon substrate by r.f. magnetron sputtering technique. A systematic study has been made of the influence of substrate temperature on the film structural and optical properties. For SAW device applications, it is necessary for ZnO films to have c-axis oriented crystalline structure. Much lower FWHM values 0.24° is obtained under the substrate temperature at 100°C for gaining effective electromechanical coupling. Crystalline structures, stress, and surface morphology characteristics of the films were investigated by X-ray diffraction, scanning electron microscopy. Reflective Second Harmonic Generation was used to analyze the quality of the ZnO film, and the results from these ZnO films coincide with the X-ray pattern and SEM image. Optical transmittance measurements were carried out by UV-visible spectrophotometer.
AB - Poly-crystal zinc oxide thin films with c-axis orientation have been successfully grown on the silicon substrate by r.f. magnetron sputtering technique. A systematic study has been made of the influence of substrate temperature on the film structural and optical properties. For SAW device applications, it is necessary for ZnO films to have c-axis oriented crystalline structure. Much lower FWHM values 0.24° is obtained under the substrate temperature at 100°C for gaining effective electromechanical coupling. Crystalline structures, stress, and surface morphology characteristics of the films were investigated by X-ray diffraction, scanning electron microscopy. Reflective Second Harmonic Generation was used to analyze the quality of the ZnO film, and the results from these ZnO films coincide with the X-ray pattern and SEM image. Optical transmittance measurements were carried out by UV-visible spectrophotometer.
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U2 - 10.1080/10584580590897254
DO - 10.1080/10584580590897254
M3 - Conference article
AN - SCOPUS:33644765830
SN - 1058-4587
VL - 69
SP - 43
EP - 53
JO - Integrated Ferroelectrics
JF - Integrated Ferroelectrics
T2 - 16th International Symposium on Integrated Ferroelectrics, ISIF-16
Y2 - 5 April 2004 through 8 April 2004
ER -