Physical properties of Al-doped MgZnO/AlGaN p–n heterojunction photodetectors

Kuang Po Hsueh, Hsien Chin Chiu, Jinn Kong Sheu, Yu Hsiang Yeh

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摘要

We report a p–n heterojunction ultraviolet photodetector (PD) based on an Al-doped MgxZn1−xO (AMZO)/Al0.08Ga0.92N heterojunction. AMZO films with 5 wt% of Al2O3 were deposited onto p–Al0.08Ga0.92N by using radio-frequency magnetron sputtering, and they were annealed at 700, 800, and 900 °C in a nitrogen ambient for 60 s. The photoluminescence spectra of the AMZO films were measured at 17 K and show two major peaks. A broad visible band could be attributed to the presence of structural defects. The AMZO film annealed at 800 °C showed a lower emission band in the visible region because of the presence of fewer defects compared with the other AMZO films. The wavelength that corresponds with the peak responsivity of the PD annealed at 800 °C was approximately 200 nm, and the cutoff wavelength was approximately 250 nm. Furthermore, the current–voltage characteristics of the Al0.08Ga0.92N/AMZO p–n junction PD showed a high leakage current. The PD annealed at 800 °C exhibited a dark current of 1.56 μA at a bias of −3 V.

原文English
文章編號501
期刊Optical and Quantum Electronics
48
發行號11
DOIs
出版狀態Published - 2016 十一月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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