Physical yield improvement for sige selective epitaxial growth fabrication process on nano scale pmos strain engineering

Ming Mao Chu, June Hua Chou

研究成果: Conference contribution

6 引文 斯高帕斯(Scopus)

摘要

In the SiGe strain engineering on pMOS, the reactive ion etching (RIE) is using to prepare a Si recess, and then use epitaxial growth to form SiGe strain liner on both sides of poly gate. In the dense line CMOS, the shrunk Si recess dimension make it steeper and introduces the challenge to remove the post etch polymer residue. It is investigated that residual polymer on steep side wall of channel will prohibit the following Selective Epitaxial Growth of SiGe (SEG) and directly impact the yield. An enhanced chemical process has proposed for surface preparation and the processes are explored to determine the clean efficiency of plasma modified polymer residue. The developed process is capable to eradicate residual polymer defect on both isolated and dense layout structure of 45nm pMOS and resulted 3~10% physical yield improvement.

原文English
主出版物標題2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009
頁面42-45
頁數4
DOIs
出版狀態Published - 2009 十一月 23
事件2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009 - Traverse City, MI, United States
持續時間: 2009 六月 22009 六月 5

出版系列

名字2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009

Other

Other2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009
國家/地區United States
城市Traverse City, MI
期間09-06-0209-06-05

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 電子、光磁材料

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