TY - JOUR
T1 - Piezoelectric properties of low-temperature sintered PNN-PZT-based ceramics and their applications
AU - Chu, Sheng Yuan
AU - Hsieh, Cheng Shung
PY - 1999/1/1
Y1 - 1999/1/1
N2 - 0.25Pb(Ni1/3Nb2/3)O3-0.75Pb(Zr0.52Ti0.48)O3 (PNN-PZT) piezoceramics, doped and undoped with BiFeO3 and Ba(Cu0.5W0.5)O3 oxides, were prepared by conventional mixed-oxide technique, using sintering temperature at 850°C-950°C. Microstructural and compositional analyses of these low-temperature sintered PNN-PZT-Based ceramics have been carried out using XRD and SEM. The effects of dopants on the sintering temperature and dielectric properties of the PNN-PZT ceramics have been investigated. In this paper, we successfully showed that these additives were helpful in both the lowering of the sintering temperature and the improvement of the dielectric properties. The optimum sintering condition is also found.
AB - 0.25Pb(Ni1/3Nb2/3)O3-0.75Pb(Zr0.52Ti0.48)O3 (PNN-PZT) piezoceramics, doped and undoped with BiFeO3 and Ba(Cu0.5W0.5)O3 oxides, were prepared by conventional mixed-oxide technique, using sintering temperature at 850°C-950°C. Microstructural and compositional analyses of these low-temperature sintered PNN-PZT-Based ceramics have been carried out using XRD and SEM. The effects of dopants on the sintering temperature and dielectric properties of the PNN-PZT ceramics have been investigated. In this paper, we successfully showed that these additives were helpful in both the lowering of the sintering temperature and the improvement of the dielectric properties. The optimum sintering condition is also found.
UR - http://www.scopus.com/inward/record.url?scp=0033294382&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033294382&partnerID=8YFLogxK
U2 - 10.1080/10584589908215584
DO - 10.1080/10584589908215584
M3 - Conference article
AN - SCOPUS:0033294382
SN - 1058-4587
VL - 24
SP - 121
EP - 127
JO - Integrated Ferroelectrics
JF - Integrated Ferroelectrics
IS - 1
T2 - The 11th International Symposium on Integrated Ferroelectrics (ISIF99)
Y2 - 7 March 1999 through 10 March 1999
ER -