PIN photocurrent studies of monolayer SimGen superlattices

V. P. Arbet-Engels, R. P.G. Karunasiri, K. L. Wang

研究成果: Conference article同行評審

摘要

PIN diodes whose intrinsic region s composed of a strained monolayer superlattice (SLS) have been fabricated by molecular beam epitaxy. The optical and geometrical properties of these structures as a function of the substrate orientation have been investigated. Transmission Electron Microscopy (TEM) and X-ray spectroscopy have been used to characterize the crystalline quality of the samples. The absorption spectra have been measured using photocurrent spectroscopy. Optical transitions extending well into the silicon bandgap have been observed. The type of the transition has been analyzed using envelope function approximation and curve fitting procedures.

原文English
頁(從 - 到)229-240
頁數12
期刊Proceedings of SPIE - The International Society for Optical Engineering
1283
DOIs
出版狀態Published - 1990 十月 1
事件Quantum Well and Superlattice Physics III 1990 - San Diego, United States
持續時間: 1990 三月 171990 三月 21

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電腦科學應用
  • 應用數學
  • 電氣與電子工程

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