Planar GaN-Based Blue Light-Emitting Diodes with Surface p-n Junction Formed by Selective-Area Si-Ion Implantation

Ming Lun Lee, Yu Hsiang Yeh, Zi Yuan Liu, Kai Jen Chiang, Jinn Kong Sheu

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

A GaN-based blue light-emitting diode structure, featuring a surface GaN p-n junction formed by selective-area Si implantation on a p-GaN surface layer, serving as a carrier injector, is demonstrated. Blue InGaN/GaN multiple quantum wells (MQWs) located under the Si-implanted planar GaN p-n junction emit a single-peak spectrum without defect-related yellow luminescence (YL). The absence of YL-band is attributed to the fact that the Si-implanted GaN homojunction only behaves a carrier injector rather than a photon injector. In other words, the single-peak blue emission does not originate from optical pumping that UV light emitted from the surface GaN homojunction (i.e., the GaN band-edge emission) to pump the underlying blue InGaN/GaN MQWs. The analysis of current-voltage characteristics and dynamic resistance tentatively elucidate that the planar surface p-n junction induces extra current paths to facilitate the carrier injection at high current injection.

原文English
文章編號8013099
頁(從 - 到)4156-4160
頁數5
期刊IEEE Transactions on Electron Devices
64
發行號10
DOIs
出版狀態Published - 2017 十月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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