Planar GaN-based UV photodetectors formed by Si implantation

M. C. Chen, Jinn-Kong Sheu, M. L. Lee, C. J. Kao, C. J. Tun, G. C. Chi

研究成果: Paper

摘要

Planar GaN-based p-n - -n + photodetectors were fabricated by Si implantation into p-GaN to form the p-n junction. Two-step triple Si implantation was performed to form a selective n + and n - area in p-GaN epitaxial layer with uniform doping profile. Therefore, a planar GaN p-n - -n + UV photodetector can be achieved. When the reverse bias was below 4V, the photodetectors showed a near constant dark current around 20pA. The dark current is somewhat high compared with conventional epitaxial p-i-n photodiodes. Spectral response measurements revealed peak of responsivity up to 12.4mA/W at 365nm for the planar p-n - -n + UV photodetector. It was also found that the visible (450nm)-to-UV (360nm) rejection ratio was around 650. Furthermore, temporal response measurements for the planar GaN-based p-n - -n + UV photodetector were measured to be as low as 5.7 ns for 90%-to-10% fall time.

原文English
頁面522-528
頁數7
出版狀態Published - 2004 十二月 1
事件State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, United States
持續時間: 2004 十月 32004 十月 8

Other

OtherState-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia
國家United States
城市Honolulu, HI
期間04-10-0304-10-08

指紋

Photodetectors
Dark currents
Epitaxial layers
Photodiodes
Doping (additives)

All Science Journal Classification (ASJC) codes

  • Engineering(all)

引用此文

Chen, M. C., Sheu, J-K., Lee, M. L., Kao, C. J., Tun, C. J., & Chi, G. C. (2004). Planar GaN-based UV photodetectors formed by Si implantation. 522-528. 論文發表於 State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States.
Chen, M. C. ; Sheu, Jinn-Kong ; Lee, M. L. ; Kao, C. J. ; Tun, C. J. ; Chi, G. C. / Planar GaN-based UV photodetectors formed by Si implantation. 論文發表於 State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States.7 p.
@conference{079010d75eab4f1399309a300e8f4cb5,
title = "Planar GaN-based UV photodetectors formed by Si implantation",
abstract = "Planar GaN-based p-n - -n + photodetectors were fabricated by Si implantation into p-GaN to form the p-n junction. Two-step triple Si implantation was performed to form a selective n + and n - area in p-GaN epitaxial layer with uniform doping profile. Therefore, a planar GaN p-n - -n + UV photodetector can be achieved. When the reverse bias was below 4V, the photodetectors showed a near constant dark current around 20pA. The dark current is somewhat high compared with conventional epitaxial p-i-n photodiodes. Spectral response measurements revealed peak of responsivity up to 12.4mA/W at 365nm for the planar p-n - -n + UV photodetector. It was also found that the visible (450nm)-to-UV (360nm) rejection ratio was around 650. Furthermore, temporal response measurements for the planar GaN-based p-n - -n + UV photodetector were measured to be as low as 5.7 ns for 90{\%}-to-10{\%} fall time.",
author = "Chen, {M. C.} and Jinn-Kong Sheu and Lee, {M. L.} and Kao, {C. J.} and Tun, {C. J.} and Chi, {G. C.}",
year = "2004",
month = "12",
day = "1",
language = "English",
pages = "522--528",
note = "State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia ; Conference date: 03-10-2004 Through 08-10-2004",

}

Chen, MC, Sheu, J-K, Lee, ML, Kao, CJ, Tun, CJ & Chi, GC 2004, 'Planar GaN-based UV photodetectors formed by Si implantation' 論文發表於 State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States, 04-10-03 - 04-10-08, 頁 522-528.

Planar GaN-based UV photodetectors formed by Si implantation. / Chen, M. C.; Sheu, Jinn-Kong; Lee, M. L.; Kao, C. J.; Tun, C. J.; Chi, G. C.

2004. 522-528 論文發表於 State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States.

研究成果: Paper

TY - CONF

T1 - Planar GaN-based UV photodetectors formed by Si implantation

AU - Chen, M. C.

AU - Sheu, Jinn-Kong

AU - Lee, M. L.

AU - Kao, C. J.

AU - Tun, C. J.

AU - Chi, G. C.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - Planar GaN-based p-n - -n + photodetectors were fabricated by Si implantation into p-GaN to form the p-n junction. Two-step triple Si implantation was performed to form a selective n + and n - area in p-GaN epitaxial layer with uniform doping profile. Therefore, a planar GaN p-n - -n + UV photodetector can be achieved. When the reverse bias was below 4V, the photodetectors showed a near constant dark current around 20pA. The dark current is somewhat high compared with conventional epitaxial p-i-n photodiodes. Spectral response measurements revealed peak of responsivity up to 12.4mA/W at 365nm for the planar p-n - -n + UV photodetector. It was also found that the visible (450nm)-to-UV (360nm) rejection ratio was around 650. Furthermore, temporal response measurements for the planar GaN-based p-n - -n + UV photodetector were measured to be as low as 5.7 ns for 90%-to-10% fall time.

AB - Planar GaN-based p-n - -n + photodetectors were fabricated by Si implantation into p-GaN to form the p-n junction. Two-step triple Si implantation was performed to form a selective n + and n - area in p-GaN epitaxial layer with uniform doping profile. Therefore, a planar GaN p-n - -n + UV photodetector can be achieved. When the reverse bias was below 4V, the photodetectors showed a near constant dark current around 20pA. The dark current is somewhat high compared with conventional epitaxial p-i-n photodiodes. Spectral response measurements revealed peak of responsivity up to 12.4mA/W at 365nm for the planar p-n - -n + UV photodetector. It was also found that the visible (450nm)-to-UV (360nm) rejection ratio was around 650. Furthermore, temporal response measurements for the planar GaN-based p-n - -n + UV photodetector were measured to be as low as 5.7 ns for 90%-to-10% fall time.

UR - http://www.scopus.com/inward/record.url?scp=17144424986&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17144424986&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:17144424986

SP - 522

EP - 528

ER -

Chen MC, Sheu J-K, Lee ML, Kao CJ, Tun CJ, Chi GC. Planar GaN-based UV photodetectors formed by Si implantation. 2004. 論文發表於 State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States.