Planar GaN-based p-n--n+ photodetectors were fabricated by Si implantation into p-GaN to form the p-n junction. Two-step triple Si implantation was performed to form a selective n+ and n-area in p-GaN epitaxial layer with uniform doping profile. Therefore, a planar GaN p-n--n+ UV photodetector can be achieved. When the reverse bias was below 4V, the photodetectors showed a near constant dark current around 20pA. The dark current is somewhat high compared with conventional epitaxial p-i-n photodiodes. Spectral response measurements revealed peak of responsivity up to 12.4mA/W at 365nm for the planar p-n --n+ UV photodetector. It was also found that the visible (450nm)-to-UV (360nm) rejection ratio was around 650. Furthermore, temporal response measurements for the planar GaN-based p-n--n+ UV photodetector were measured to be as low as 5.7 ns for 90%-to-10% fall time.
|出版狀態||Published - 2004|
|事件||State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, United States|
持續時間: 2004 十月 3 → 2004 十月 8
|Other||State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia|
|期間||04-10-03 → 04-10-08|
All Science Journal Classification (ASJC) codes