Planar GaN-based UV photodetectors formed by Si implantation

M. C. Chen, J. K. Sheu, M. L. Lee, C. J. Kao, C. J. Tun, G. C. Chi

研究成果: Paper同行評審

摘要

Planar GaN-based p-n--n+ photodetectors were fabricated by Si implantation into p-GaN to form the p-n junction. Two-step triple Si implantation was performed to form a selective n+ and n-area in p-GaN epitaxial layer with uniform doping profile. Therefore, a planar GaN p-n--n+ UV photodetector can be achieved. When the reverse bias was below 4V, the photodetectors showed a near constant dark current around 20pA. The dark current is somewhat high compared with conventional epitaxial p-i-n photodiodes. Spectral response measurements revealed peak of responsivity up to 12.4mA/W at 365nm for the planar p-n --n+ UV photodetector. It was also found that the visible (450nm)-to-UV (360nm) rejection ratio was around 650. Furthermore, temporal response measurements for the planar GaN-based p-n--n+ UV photodetector were measured to be as low as 5.7 ns for 90%-to-10% fall time.

原文English
頁面522-528
頁數7
出版狀態Published - 2004
事件State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, United States
持續時間: 2004 十月 32004 十月 8

Other

OtherState-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia
國家United States
城市Honolulu, HI
期間04-10-0304-10-08

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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