Point defects in sputtered NiO films

Wei Luen Jang, Yang Ming Lu, Weng Sing Hwang, Tung Li Hsiung, H. Paul Wang

研究成果: Article同行評審

95 引文 斯高帕斯(Scopus)

摘要

The dominant point defects in p -type NiO films were determined by analyzing the coordination number (CN) change with various annealing temperatures and the composition profile of double-layer films deposited individually in oxygen and in argon atmospheres. The results show that the nonstoichiometry of sputtered NiO film is determined by the number of nickel atoms rather than by the number of oxygen atoms. It is concluded that nickel vacancies are the dominant point defects that result in the electrical conductivity of NiO films.

原文English
文章編號062103
期刊Applied Physics Letters
94
發行號6
DOIs
出版狀態Published - 2009

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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