Polymer flip-chip integrated, AlGaAsSb/AlGaSb p-i-n photodetectors for 1550 nm high-speed optical interconnects

Saurabh K. Lohokare; Chris A. Schuetz; Zhaolin Lu; Dennis W. Prather; Oleg V. Sulima; Jeffery A. Cox; Viktor A. Solov'ev; Sergey V. Ivanov; Jian V. Li

doi:10.1117/12.527869

Polymer flip-chip integrated, AlGaAsSb/AlGaSb p-i-n photodetectors for 1550 nm high-speed optical interconnects

Saurabh K. Lohokare, Chris A. Schuetz, Zhaolin Lu, Dennis W. Prather, Oleg V. Sulima, Jeffery A. Cox, Viktor A. Solov'ev, Sergey V. Ivanov, Jian V. Li

航空太空工程學系

研究成果: Conference article › 同行評審

摘要

AlGaAsSb/AlGaSb heterostructures offer the ability to realize high-performance devices for 1550 nm high-speed optical interconnect applications. In this context, we present the design, fabrication, integration and characterization of 10 GHz p-i-n photodetectors in this material system. This effort has involved an investigation into inductively coupled plasma (ICP) etching of these materials and the development of a novel process for their conductive polymer based flip chip die attach.

原文	English
頁（從 - 到）	36-47
頁數	12
期刊	Proceedings of SPIE - The International Society for Optical Engineering
卷	5353
DOIs	https://doi.org/10.1117/12.527869
出版狀態	Published - 2004 8月 16
事件	Semiconductor Photodetectors - San Jose, CA, United States 持續時間: 2004 1月 28 → 2004 1月 29

All Science Journal Classification (ASJC) codes

電子、光磁材料
凝聚態物理學
電腦科學應用
應用數學
電氣與電子工程

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Lohokare, Saurabh K. ; Schuetz, Chris A. ; Lu, Zhaolin ; Prather, Dennis W. ; Sulima, Oleg V. ; Cox, Jeffery A. ; Solov'ev, Viktor A. ; Ivanov, Sergey V. ; Li, Jian V. / Polymer flip-chip integrated, AlGaAsSb/AlGaSb p-i-n photodetectors for 1550 nm high-speed optical interconnects. 於: Proceedings of SPIE - The International Society for Optical Engineering. 2004 ; 卷 5353. 頁 36-47.

@article{ca668116caa5425f865241466bf43525,

title = "Polymer flip-chip integrated, AlGaAsSb/AlGaSb p-i-n photodetectors for 1550 nm high-speed optical interconnects",

abstract = "AlGaAsSb/AlGaSb heterostructures offer the ability to realize high-performance devices for 1550 nm high-speed optical interconnect applications. In this context, we present the design, fabrication, integration and characterization of 10 GHz p-i-n photodetectors in this material system. This effort has involved an investigation into inductively coupled plasma (ICP) etching of these materials and the development of a novel process for their conductive polymer based flip chip die attach.",

author = "Lohokare, {Saurabh K.} and Schuetz, {Chris A.} and Zhaolin Lu and Prather, {Dennis W.} and Sulima, {Oleg V.} and Cox, {Jeffery A.} and Solov'ev, {Viktor A.} and Ivanov, {Sergey V.} and Li, {Jian V.}",

year = "2004",

month = aug,

day = "16",

doi = "10.1117/12.527869",

language = "English",

volume = "5353",

pages = "36--47",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Semiconductor Photodetectors ; Conference date: 28-01-2004 Through 29-01-2004",

}

Polymer flip-chip integrated, AlGaAsSb/AlGaSb p-i-n photodetectors for 1550 nm high-speed optical interconnects. / Lohokare, Saurabh K.; Schuetz, Chris A.; Lu, Zhaolin; Prather, Dennis W.; Sulima, Oleg V.; Cox, Jeffery A.; Solov'ev, Viktor A.; Ivanov, Sergey V.; Li, Jian V.

於: Proceedings of SPIE - The International Society for Optical Engineering, 卷 5353, 16.08.2004, p. 36-47.

研究成果: Conference article › 同行評審

TY - JOUR

T1 - Polymer flip-chip integrated, AlGaAsSb/AlGaSb p-i-n photodetectors for 1550 nm high-speed optical interconnects

AU - Lohokare, Saurabh K.

AU - Schuetz, Chris A.

AU - Lu, Zhaolin

AU - Prather, Dennis W.

AU - Sulima, Oleg V.

AU - Cox, Jeffery A.

AU - Solov'ev, Viktor A.

AU - Ivanov, Sergey V.

AU - Li, Jian V.

PY - 2004/8/16

Y1 - 2004/8/16

N2 - AlGaAsSb/AlGaSb heterostructures offer the ability to realize high-performance devices for 1550 nm high-speed optical interconnect applications. In this context, we present the design, fabrication, integration and characterization of 10 GHz p-i-n photodetectors in this material system. This effort has involved an investigation into inductively coupled plasma (ICP) etching of these materials and the development of a novel process for their conductive polymer based flip chip die attach.

AB - AlGaAsSb/AlGaSb heterostructures offer the ability to realize high-performance devices for 1550 nm high-speed optical interconnect applications. In this context, we present the design, fabrication, integration and characterization of 10 GHz p-i-n photodetectors in this material system. This effort has involved an investigation into inductively coupled plasma (ICP) etching of these materials and the development of a novel process for their conductive polymer based flip chip die attach.

UR - http://www.scopus.com/inward/record.url?scp=3543089191&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3543089191&partnerID=8YFLogxK

U2 - 10.1117/12.527869

DO - 10.1117/12.527869

M3 - Conference article

AN - SCOPUS:3543089191

VL - 5353

SP - 36

EP - 47

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

T2 - Semiconductor Photodetectors

Y2 - 28 January 2004 through 29 January 2004

ER -

Polymer flip-chip integrated, AlGaAsSb/AlGaSb p-i-n photodetectors for 1550 nm high-speed optical interconnects

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