Polymer flip-chip integrated, AlGaAsSb/AlGaSb p-i-n photodetectors for 1550 nm high-speed optical interconnects

Saurabh K. Lohokare, Chris A. Schuetz, Zhaolin Lu, Dennis W. Prather, Oleg V. Sulima, Jeffery A. Cox, Viktor A. Solov'ev, Sergey V. Ivanov, Jian V. Li

研究成果: Conference article同行評審

摘要

AlGaAsSb/AlGaSb heterostructures offer the ability to realize high-performance devices for 1550 nm high-speed optical interconnect applications. In this context, we present the design, fabrication, integration and characterization of 10 GHz p-i-n photodetectors in this material system. This effort has involved an investigation into inductively coupled plasma (ICP) etching of these materials and the development of a novel process for their conductive polymer based flip chip die attach.

原文English
頁(從 - 到)36-47
頁數12
期刊Proceedings of SPIE - The International Society for Optical Engineering
5353
DOIs
出版狀態Published - 2004 8月 16
事件Semiconductor Photodetectors - San Jose, CA, United States
持續時間: 2004 1月 282004 1月 29

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電腦科學應用
  • 應用數學
  • 電氣與電子工程

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