AlGaAsSb/AlGaSb heterostructures offer the ability to realize high-performance devices for 1550 nm high-speed optical interconnect applications. In this context, we present the design, fabrication, integration and characterization of 10 GHz p-i-n photodetectors in this material system. This effort has involved an investigation into inductively coupled plasma (ICP) etching of these materials and the development of a novel process for their conductive polymer based flip chip die attach.
|頁（從 - 到）||36-47|
|期刊||Proceedings of SPIE - The International Society for Optical Engineering|
|出版狀態||Published - 2004 8月 16|
|事件||Semiconductor Photodetectors - San Jose, CA, United States|
持續時間: 2004 1月 28 → 2004 1月 29
All Science Journal Classification (ASJC) codes