Polymorphic Layered MoTe2 from Semiconductor, Topological Insulator, to Weyl Semimetal

Raman Sankar, G. Narsinga Rao, I. Panneer Muthuselvam, Christopher Butler, Nitesh Kumar, G. Senthil Murugan, Chandra Shekhar, Tay Rong Chang, Cheng Yen Wen, Chun Wei Chen, Wei Li Lee, M. T. Lin, Horng Tay Jeng, Claudia Felser, F. C. Chou

研究成果: Article同行評審

32 引文 斯高帕斯(Scopus)

摘要

Large size (∼2 cm) single crystals of layered MoTe2 in both 2H- and 1T′-types were synthsized using TeBr4 as the source of Br2 transport agent in chemical vapor transport growth. The crystal structures of the as-grown single crystals were fully characterized by X-ray diffraction, Raman spectroscopy, scanning transmission electron microscopy, scanning tunneling microscopy (STM), and electrical resistivity (ρ) measurements. The resistivity ρ(T), magnetic susceptibility χ(T), and heat capacity Cp(T) measurement results reveal a first order structural phase transition near ∼240 K for 1T′-MoTe2, which has been identified to be the orthorhombic Td-phase of MoTe2 as a candidate of Weyl semimetal. The STM study revealed different local defect geometries found on the surface of 2H- and Td-types of MoTe6 units in trigonal prismatic and distorted octahedral coordination, respectively.

原文English
頁(從 - 到)699-707
頁數9
期刊Chemistry of Materials
29
發行號2
DOIs
出版狀態Published - 2017 一月 24

All Science Journal Classification (ASJC) codes

  • 化學 (全部)
  • 化學工程 (全部)
  • 材料化學

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