Positioning effect of type-II GaSb/GaAs quantum ring layer on solar cell performances

Shun Chieh Hsu, Yin Han Chen, Hsuan An Chen, Shih Yen Lin, Tien Lin Shen, Hao Chung Kuo, Cheng Lun Shih, Jinn-Kong Sheu, Chien Chung Lin

研究成果: Conference contribution

4 引文 斯高帕斯(Scopus)

摘要

In this work, we demonstrate the positioning effect of the type-II quantum ring (QR) on the solar cell efficiencies. The QR layer was placed in either p-type or n-type region to test its effect on the performance. Under one Sun condition, the one with p-type QR layer has better efficiency and open-circuit voltage. But this advantage loses quickly when the sunlight is concentrated over 20 times. From the concentrated sunlight measurement, the sample with QR layer in the n-type region can sustain the Voc reduction until 80 Suns.

原文English
主出版物標題2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781479979448
DOIs
出版狀態Published - 2015 十二月 14
事件42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
持續時間: 2015 六月 142015 六月 19

出版系列

名字2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

Other

Other42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
國家United States
城市New Orleans
期間15-06-1415-06-19

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Hsu, S. C., Chen, Y. H., Chen, H. A., Lin, S. Y., Shen, T. L., Kuo, H. C., Shih, C. L., Sheu, J-K., & Lin, C. C. (2015). Positioning effect of type-II GaSb/GaAs quantum ring layer on solar cell performances. 於 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 [7355811] (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7355811