Postannealing effect on ITO/p+-GaP with a diffused layer

H. M. Lo; S. C. Shei; X. F. Zeng; S. J. Chang; H. Y. Lin

doi:10.1149/1.3559190

Postannealing effect on ITO/p⁺-GaP with a diffused layer

H. M. Lo, S. C. Shei, X. F. Zeng, S. J. Chang, H. Y. Lin

微電子工程研究所

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

In this study, indium tin oxide (ITO) films were deposited on p-type GaP films with a AuBe diffused metal layer to form ohmic contacts. Without the AuBe diffused into p-GaP films, the ITO deposited on p-GaP showed a non-ohmic characteristic. After the AuBe diffused, the ITO deposited on p-GaP displayed a linear current-voltage characteristic and the specific contact resistance showed 2.63 10^-4 ω cm²⁺. Furthermore, the specific contact resistance could be improved to 1.57 10^-4 ωcm²⁺ when the sample post-annealed at 400C. The transmittance of ITO film almost was kept at 90% in the wavelength range of 400-700 nm after thermal annealing. These results revealed that the ITO films can be a suitable transparent current spreading layer for the fabrication of AlGaInP-based light-emitting diodes with a AuBe diffused metal layer.

原文	English
頁（從 - 到）	H506-H509
期刊	Journal of the Electrochemical Society
卷	158
發行號	5
DOIs	https://doi.org/10.1149/1.3559190
出版狀態	Published - 2011

All Science Journal Classification (ASJC) codes

電子、光磁材料
凝聚態物理學
材料化學
表面、塗料和薄膜
電化學
可再生能源、永續發展與環境

UN SDG

此研究成果有助於以下永續發展目標

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10.1149/1.3559190

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引用此

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title = "Postannealing effect on ITO/p+-GaP with a diffused layer",

abstract = "In this study, indium tin oxide (ITO) films were deposited on p-type GaP films with a AuBe diffused metal layer to form ohmic contacts. Without the AuBe diffused into p-GaP films, the ITO deposited on p-GaP showed a non-ohmic characteristic. After the AuBe diffused, the ITO deposited on p-GaP displayed a linear current-voltage characteristic and the specific contact resistance showed 2.63 10-4 ω cm2+. Furthermore, the specific contact resistance could be improved to 1.57 10-4 ωcm2+ when the sample post-annealed at 400C. The transmittance of ITO film almost was kept at 90% in the wavelength range of 400-700 nm after thermal annealing. These results revealed that the ITO films can be a suitable transparent current spreading layer for the fabrication of AlGaInP-based light-emitting diodes with a AuBe diffused metal layer.",

author = "Lo, {H. M.} and Shei, {S. C.} and Zeng, {X. F.} and Chang, {S. J.} and Lin, {H. Y.}",

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AU - Lin, H. Y.

PY - 2011

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N2 - In this study, indium tin oxide (ITO) films were deposited on p-type GaP films with a AuBe diffused metal layer to form ohmic contacts. Without the AuBe diffused into p-GaP films, the ITO deposited on p-GaP showed a non-ohmic characteristic. After the AuBe diffused, the ITO deposited on p-GaP displayed a linear current-voltage characteristic and the specific contact resistance showed 2.63 10-4 ω cm2+. Furthermore, the specific contact resistance could be improved to 1.57 10-4 ωcm2+ when the sample post-annealed at 400C. The transmittance of ITO film almost was kept at 90% in the wavelength range of 400-700 nm after thermal annealing. These results revealed that the ITO films can be a suitable transparent current spreading layer for the fabrication of AlGaInP-based light-emitting diodes with a AuBe diffused metal layer.

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