In this study, indium tin oxide (ITO) films were deposited on p-type GaP films with a AuBe diffused metal layer to form ohmic contacts. Without the AuBe diffused into p-GaP films, the ITO deposited on p-GaP showed a non-ohmic characteristic. After the AuBe diffused, the ITO deposited on p-GaP displayed a linear current-voltage characteristic and the specific contact resistance showed 2.63 10-4 ω cm2+. Furthermore, the specific contact resistance could be improved to 1.57 10-4 ωcm2+ when the sample post-annealed at 400C. The transmittance of ITO film almost was kept at 90% in the wavelength range of 400-700 nm after thermal annealing. These results revealed that the ITO films can be a suitable transparent current spreading layer for the fabrication of AlGaInP-based light-emitting diodes with a AuBe diffused metal layer.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry