Postannealing effects on undoped BaSi2 evaporated films grown on Si substrates

Takamichi Suhara, Koichi Murata, Aryan Navabi, Kosuke O. Hara, Yoshihiko Nakagawa, Cham Thi Trinh, Yasuyoshi Kurokawa, Takashi Suemasu, Kang L. Wang, Noritaka Usami

研究成果: Article同行評審

15 引文 斯高帕斯(Scopus)

摘要

Semiconducting BaSi2 is expected as an alternative material for solar cell application because of large absorption coefficients and a suitable bandgap for single-junction solar cells. In this study, the electrical properties of undoped BaSi2 films grown by a simple vacuum evaporation method are explored. The obtained results show that an undoped evaporated film is an n-type semiconductor with a high carrier density of ∼1019 cm-3 and exhibits a metallic behavior. The quality of BaSi2 films is significantly improved by postannealing at 1000°C with surface covering to prevent oxidation. After annealing, the carrier density of BaSi2 films markedly decreases and the temperature dependence of carrier density changes from being metallic to being semiconducting. By comprehensive structural analysis, it is speculated that postannealing improves the film quality, for example, by decreasing the density of grain boundaries.

原文English
文章編號05DB05
期刊Japanese Journal of Applied Physics
56
DOIs
出版狀態Published - 2017 五月

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學 (全部)

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