Postoxidation thermal annealing effects of liquid phase deposited TiO2 on (NH4)2Sx-treated AlGaAs

Chih Chun Hu, Tai Lung Lee, Yong Jie Zou, Kuan Wei Lee, Yeong Her Wang

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Liquid phase deposition (LPD) was performed to fabricate titanium dioxide (TiO2) on AlGaAs by using ammonium sulfide pretreatment. In addition, the study investigated how postoxidation rapid thermal annealing (RTA) affected the LPD-TiO2 on (NH4)2Sx-treated AlGaAs. The deposition rate of the as-deposited LPD-TiO2 for the 10 min 5% (NH4)2Sx-treated AlGaAs was approximately 126 nm/h. Following the 10 min 5% (NH4)2Sx pretreatment and a postoxidation RTA at 350°C for 1 min, the root mean square value, leakage current density at 0 MV/cm, interface trap density, and flat-band voltage shift were improved to 6.20, 5.64 × 10-8 A/cm2, 6.48 × 1011 cm-2 eV-1, and 1.5 V, respectively.

原文English
頁(從 - 到)40-43
頁數4
期刊Thin Solid Films
563
DOIs
出版狀態Published - 2014 七月 31

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學

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