Power-frequency scaling of multi-layered microwave devices

B. Jogai; K. L. Wang; G. P. Li; R. Abdeshaah

doi:10.1016/0749-6036(85)90090-4

Power-frequency scaling of multi-layered microwave devices

B. Jogai, K. L. Wang, G. P. Li, R. Abdeshaah

電機資訊學院

研究成果: Article › 同行評審

摘要

The r.f. power obtainable from transit-time devices is shown to increase if they are stacked in series. The power-frequency scaling was obtained for both cases of electronic and thermal dissipation limits. It is demonstrated that the advantage of using multi-layered devices lies at at higher frequencies.

原文	English
頁（從 - 到）	299-302
頁數	4
期刊	Superlattices and Microstructures
卷	1
發行號	4
DOIs	https://doi.org/10.1016/0749-6036(85)90090-4
出版狀態	Published - 1985

All Science Journal Classification (ASJC) codes

材料科學(全部)
凝聚態物理學
電氣與電子工程

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10.1016/0749-6036(85)90090-4

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title = "Power-frequency scaling of multi-layered microwave devices",

abstract = "The r.f. power obtainable from transit-time devices is shown to increase if they are stacked in series. The power-frequency scaling was obtained for both cases of electronic and thermal dissipation limits. It is demonstrated that the advantage of using multi-layered devices lies at at higher frequencies.",

author = "B. Jogai and Wang, {K. L.} and Li, {G. P.} and R. Abdeshaah",

note = "Funding Information: ACKNOWLEDGMEN-T This work was in part supported by the U. S. Army Research Office under contract DAAG-29-83-K-0070.",

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AU - Wang, K. L.

AU - Li, G. P.

AU - Abdeshaah, R.

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PY - 1985

Y1 - 1985

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AB - The r.f. power obtainable from transit-time devices is shown to increase if they are stacked in series. The power-frequency scaling was obtained for both cases of electronic and thermal dissipation limits. It is demonstrated that the advantage of using multi-layered devices lies at at higher frequencies.

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Power-frequency scaling of multi-layered microwave devices

摘要

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