Preparation and analysis of silicon negative differential resistance diodes with porous superlattice structure

Shui-Jinn Wang, Hao Yi Tsai, Hung Jen Lin

研究成果: Article同行評審

摘要

In this paper, the preparation and electrical properties of silicon porous superlattice (SPS) negative differential resistance (NDR) diodes are presented. Two different methods (namely, method A and method B) were employed for the fabrication of SPSs. In method A, the anodization was performed under periodical ultraviolet (UV) illumination while in method B, the anodization was carried out under periodical modulation of the etching current density. For both types of SPS diodes, strong NDR with a peak-to-valley current ratio in the range of 2.6-5.1 was observed at room temperature. It was presumed that a resonant tunneling mechanism analogous to that which occurs in conventional resonant tunneling diodes with a double barrier or a superlattice structure might have been responsible for the observation results. The influence of the UV illumination interval in method A and the low current interval in method B on the NDR characteristics of the SPS diodes are discussed. In addition, the photo sensitive NDR characteristics of SPS diodes using method B are also reported.

原文English
頁(從 - 到)235-242
頁數8
期刊Proceedings of the National Science Council, Republic of China, Part A: Physical Science and Engineering
22
發行號2
出版狀態Published - 1998 三月 1

All Science Journal Classification (ASJC) codes

  • 工程 (全部)

指紋

深入研究「Preparation and analysis of silicon negative differential resistance diodes with porous superlattice structure」主題。共同形成了獨特的指紋。

引用此