Preparation and characterization of In₂O₃ films with (111) preferred orientation

In this study, In₂O₃ films were prepared by three methods and resulted in three different film structures. We firstly produced In₂O₃ polycrystal films by the evaporation of In source under oxygen ambient. In the second attempt, In₂O₃(111) films were fabricated by oxidation of In films. The surface scattering contributed to the resistivity of the oxidized In film and resulted a poor conductivity. As the third approach, a combination of the first and the second way, we prepared an ultrathin In film, oxidized it, and made it served as a seeding layer in the evaporation of In source under oxygen ambient. Due to the specific fabrication, we obtained the In₂O₃(111) films, in which a better conductivity and a smooth surface were observed in the In ₂O₃(111) film through the third approach.