Preparation and characterization of transparent semiconductor RuO 2-SiO2 films synthesized by sol-gel route

Jiann Shing Jeng, Yun Ting Lin, J. S. Chen

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

RuO2-SiO2 thin films with different Si/Ru molar ratios were prepared by the sol-gel method, using the hydrate ruthenium (III) chloride (RuCl3•3.5H2O) and tetraethylorthosilicate as precursors. The crystal structure, resistivity, chemical bonding configuration, transmittance, carrier concentration, and mobility of the RuO2-SiO2 films were investigated before and after annealing in N2 ambient at 400-700 °C. The resistivity of the RuO2-SiO2 films with different Si/Ru molar ratios decreased abruptly after annealing at 400-700 °C. On the other hand, RuO2 phase precipitated in the RuO2-SiO2 films with different Si/Ru molar ratios after annealing. Fourier transform infrared spectroscopy spectra indicated that the water absorption occurs for as-deposited RuO2-SiO2 films with different Si/Ru molar ratios. The transmittance of all RuO2-SiO2 films presented transmittance maximums after annealing at 700 °C. The carrier concentration and mobility of RuO2-SiO2 films are related to the Si/Ru molar ratios and the annealing temperature. This study discusses the connection among the material properties of the RuO2-SiO2 films and how they are influenced by the Si/Ru molar ratios and the annealing temperatures of RuO2-SiO2 films.

原文English
頁(從 - 到)5416-5420
頁數5
期刊Thin Solid Films
518
發行號19
DOIs
出版狀態Published - 2010 七月 30

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學

指紋

深入研究「Preparation and characterization of transparent semiconductor RuO <sub>2</sub>-SiO<sub>2</sub> films synthesized by sol-gel route」主題。共同形成了獨特的指紋。

引用此