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Preparation of low leakage current fluorine-doped silicon-oxycarbide by PECVD
C. C. Huang,
J. L. Huang
, Y. L. Wang, Y. D. Juang, Y. S. Ho, T. C. Hu
材料科學及工程學系
尖端材料國際碩士學位學程
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Engineering & Materials Science
Plasma enhanced chemical vapor deposition
100%
Fluorine
97%
Leakage currents
75%
Silicon
55%
X ray photoelectron spectroscopy
28%
Flow rate
26%
Permittivity
23%
Refractive index
15%
Silanes
15%
Fourier transform infrared spectroscopy
14%
Stretching
12%
Current density
11%
Carbon dioxide
10%
Physics & Astronomy
fluorine
70%
leakage
58%
vapor deposition
54%
preparation
51%
silicon
37%
flow velocity
28%
photoelectron spectroscopy
19%
permittivity
16%
very large scale integration
14%
silanes
12%
carbon dioxide
12%
fluorides
11%
infrared spectroscopy
10%
x rays
10%
current density
8%
refractivity
8%
requirements
7%
Chemical Compounds
Leakage Current
92%
Plasma Enhanced Chemical Vapour Deposition
84%
Liquid Film
34%
Flow Kinetics
27%
Dielectric Constant
21%
Dielectric Material
20%
Fluorine Atom
20%
Tetramethylsilane
17%
X-Ray Photoelectron Spectroscopy
16%
Refractive Index
11%
Wave
10%
Fluoride
9%
Carbon Dioxide
9%
Current Density
8%
Fourier Transform Infrared Spectroscopy
6%