Preparation of p-SnO/n-ZnO heterojunction nanowire arrays and their optoelectronic characteristics under UV illumination

Fu Shou Tsai, Shui Jinn Wang, Yung Chun Tu, Yu Wei Hsu, Chao Yin Kuo, Zeng Sing Lin, Rong Ming Ko

研究成果: Article

29 引文 斯高帕斯(Scopus)

摘要

In this work, the use of a ZnO-nanowire (NW)-based heterojunction array structure for application to UV sensors is proposed. Nano-heterojunction arrays (NHAs) were formed via the oblique-angle sputtering deposition of p-type tin monoxide onto vertically aligned ZnO-NWs grown by hydrothermal growth (HTG). The current density-voltage (J-V) curve in darkness shows that the prepared SnO/ZnO-NW NHAs have rectifying current-voltage characteristics. They also exhibit a superior response to UV (254 nm) light illumination. The optoelectronic properties of the SnO/ ZnO-NW NHAs with different SnO thicknesses (50-1000 nm) under different UV light intensities (2-6mW/cm2) were investigated and discussed. UV sensitivity (IUV=Idark) as high as 8.5 was obtained.

原文English
文章編號25002
期刊Applied Physics Express
4
發行號2
DOIs
出版狀態Published - 2011 二月 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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