Preparation of p-SnO/n-ZnO heterojunction nanowire arrays and their optoelectronic characteristics under UV illumination

Fu Shou Tsai; Shui Jinn Wang; Yung Chun Tu; Yu Wei Hsu; Chao Yin Kuo; Zeng Sing Lin; Rong Ming Ko

doi:10.1143/APEX.4.025002

Preparation of p-SnO/n-ZnO heterojunction nanowire arrays and their optoelectronic characteristics under UV illumination

Fu Shou Tsai, Shui Jinn Wang, Yung Chun Tu, Yu Wei Hsu, Chao Yin Kuo, Zeng Sing Lin, Rong Ming Ko

研究成果: Article › 同行評審

35 引文斯高帕斯（Scopus）

摘要

In this work, the use of a ZnO-nanowire (NW)-based heterojunction array structure for application to UV sensors is proposed. Nano-heterojunction arrays (NHAs) were formed via the oblique-angle sputtering deposition of p-type tin monoxide onto vertically aligned ZnO-NWs grown by hydrothermal growth (HTG). The current density-voltage (J-V) curve in darkness shows that the prepared SnO/ZnO-NW NHAs have rectifying current-voltage characteristics. They also exhibit a superior response to UV (254 nm) light illumination. The optoelectronic properties of the SnO/ ZnO-NW NHAs with different SnO thicknesses (50-1000 nm) under different UV light intensities (2-6mW/cm²) were investigated and discussed. UV sensitivity (I_UV=I_dark) as high as 8.5 was obtained.

原文	English
文章編號	25002
期刊	Applied Physics Express
卷	4
發行號	2
DOIs	https://doi.org/10.1143/APEX.4.025002
出版狀態	Published - 2011 2月

All Science Journal Classification (ASJC) codes

一般工程
一般物理與天文學

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10.1143/APEX.4.025002

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abstract = "In this work, the use of a ZnO-nanowire (NW)-based heterojunction array structure for application to UV sensors is proposed. Nano-heterojunction arrays (NHAs) were formed via the oblique-angle sputtering deposition of p-type tin monoxide onto vertically aligned ZnO-NWs grown by hydrothermal growth (HTG). The current density-voltage (J-V) curve in darkness shows that the prepared SnO/ZnO-NW NHAs have rectifying current-voltage characteristics. They also exhibit a superior response to UV (254 nm) light illumination. The optoelectronic properties of the SnO/ ZnO-NW NHAs with different SnO thicknesses (50-1000 nm) under different UV light intensities (2-6mW/cm2) were investigated and discussed. UV sensitivity (IUV=Idark) as high as 8.5 was obtained.",

author = "Tsai, {Fu Shou} and Wang, {Shui Jinn} and Tu, {Yung Chun} and Hsu, {Yu Wei} and Kuo, {Chao Yin} and Lin, {Zeng Sing} and Ko, {Rong Ming}",

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AU - Tsai, Fu Shou

AU - Wang, Shui Jinn

AU - Tu, Yung Chun

AU - Hsu, Yu Wei

AU - Kuo, Chao Yin

AU - Lin, Zeng Sing

AU - Ko, Rong Ming

PY - 2011/2

Y1 - 2011/2

N2 - In this work, the use of a ZnO-nanowire (NW)-based heterojunction array structure for application to UV sensors is proposed. Nano-heterojunction arrays (NHAs) were formed via the oblique-angle sputtering deposition of p-type tin monoxide onto vertically aligned ZnO-NWs grown by hydrothermal growth (HTG). The current density-voltage (J-V) curve in darkness shows that the prepared SnO/ZnO-NW NHAs have rectifying current-voltage characteristics. They also exhibit a superior response to UV (254 nm) light illumination. The optoelectronic properties of the SnO/ ZnO-NW NHAs with different SnO thicknesses (50-1000 nm) under different UV light intensities (2-6mW/cm2) were investigated and discussed. UV sensitivity (IUV=Idark) as high as 8.5 was obtained.

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Preparation of p-SnO/n-ZnO heterojunction nanowire arrays and their optoelectronic characteristics under UV illumination

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