Metallic thin films of LaNiO3 (LNO) have been prepared by the sol-gel method using lanthanum nitrate [La(NO3)3· 6H2O] and nickel acetate [Ni(CH3COO)2· 4H2O] as raw materials. X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and electrical measurements were used to characterize the multilayer LNO thin films. The perovskite phase appears after annealing at temperatures above 600°C. LNO thin films are n-type metallic oxide. The lowest resistivity is 621 μΩ-cm after annealing at 600°C, and the carrier concentration is 6.09×1022/cm 3.