Preparation of perovskite conductive LaNiO3 films by sol-gel techniques

Pei Ying Lai, Jen-Sue Chen

研究成果: Conference contribution

摘要

Metallic thin films of LaNiO3 (LNO) have been prepared by the sol-gel method using lanthanum nitrate [La(NO3)3· 6H2O] and nickel acetate [Ni(CH3COO)2· 4H2O] as raw materials. X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and electrical measurements were used to characterize the multilayer LNO thin films. The perovskite phase appears after annealing at temperatures above 600°C. LNO thin films are n-type metallic oxide. The lowest resistivity is 621 μΩ-cm after annealing at 600°C, and the carrier concentration is 6.09×1022/cm 3.

原文English
主出版物標題Science and Technology of Nonvolatile Memories
頁面31-36
頁數6
出版狀態Published - 2006 十二月 1
事件2006 MRS Spring Meeting - San Francisco, CA, United States
持續時間: 2006 四月 172006 四月 21

出版系列

名字Materials Research Society Symposium Proceedings
933
ISSN(列印)0272-9172

Other

Other2006 MRS Spring Meeting
國家United States
城市San Francisco, CA
期間06-04-1706-04-21

    指紋

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

引用此

Lai, P. Y., & Chen, J-S. (2006). Preparation of perovskite conductive LaNiO3 films by sol-gel techniques. 於 Science and Technology of Nonvolatile Memories (頁 31-36). (Materials Research Society Symposium Proceedings; 卷 933).