Preparation of SiO2 film by direct photo-cvd on strained SiGe layer

C. T. Lin, Y. K. Su, S. J. Chang, D. K. Nayak, Y. Shiraki

研究成果: Conference article同行評審

摘要

High quality SiO2 layers were deposited on top of strained SiGe by direct photochemical vapor deposition with a deuterium lamp as the excitation source. It was found that the deposition rate increase linearly with the chamber pressure. Auger Electron spectroscopy profile shows that these is no Ge rejected and no Ge-rich layer formed after devices were fabricated. At room temperature, the leakage current is about 3 10-9 A/cm2 under a 2 06 V/cm electric field. The breakdown field can reach over 16 MV/cm for these SiGe MOS diodes.

原文English
頁(從 - 到)131-136
頁數6
期刊Proceedings of SPIE - The International Society for Optical Engineering
2364
DOIs
出版狀態Published - 1994 十月 26
事件2nd International Conference on Thin Film Physics and Applications 1994 - Shanghai, China
持續時間: 1994 四月 151994 四月 17

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電腦科學應用
  • 應用數學
  • 電氣與電子工程

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