High quality SiO2 layers were deposited on top of strained SiGe by direct photochemical vapor deposition with a deuterium lamp as the excitation source. It was found that the deposition rate increase linearly with the chamber pressure. Auger Electron spectroscopy profile shows that these is no Ge rejected and no Ge-rich layer formed after devices were fabricated. At room temperature, the leakage current is about 3 10-9 A/cm2 under a 2 06 V/cm electric field. The breakdown field can reach over 16 MV/cm for these SiGe MOS diodes.
|頁（從 - 到）||131-136|
|期刊||Proceedings of SPIE - The International Society for Optical Engineering|
|出版狀態||Published - 1994 十月 26|
|事件||2nd International Conference on Thin Film Physics and Applications 1994 - Shanghai, China|
持續時間: 1994 四月 15 → 1994 四月 17
All Science Journal Classification (ASJC) codes