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Preparation of SiO
2
film by direct photo-cvd on strained SiGe layer
C. T. Lin, Y. K. Su,
S. J. Chang
, D. K. Nayak, Y. Shiraki
微電子工程研究所
研究成果
:
Conference article
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Engineering & Materials Science
Vapor deposition
85%
Auger electron spectroscopy
84%
Deuterium
77%
Deposition rates
69%
Electric lamps
59%
Leakage currents
58%
Diodes
49%
Electric fields
49%
Temperature
21%
Mathematics
SiGe
100%
SiO2
88%
Preparation
61%
Leakage Current
54%
Diode
37%
Spectroscopy
35%
Electric Field
30%
Breakdown
28%
Excitation
27%
Electron
27%
Linearly
21%
Physics & Astronomy
preparation
39%
pressure chambers
34%
Auger spectroscopy
26%
electron spectroscopy
26%
luminaires
25%
deuterium
25%
leakage
22%
breakdown
21%
vapor deposition
20%
diodes
20%
electric fields
15%
room temperature
15%
profiles
14%
excitation
13%
Chemical Compounds
Leakage Current
71%
Auger Electron Spectroscopy
61%
Electric Field
48%
Pressure
31%
Ambient Reaction Temperature
30%
Liquid Film
26%