Preparation of Strontium Titanate Thin Film on Titanium Metal Substrate by Hydrothermal‐Electrochemical Method

Seung Eul Yoo; Motoo Hayashi; Nobuo Ishizawa; Masahiro Yoshimura

doi:10.1111/j.1151-2916.1990.tb07637.x

Preparation of Strontium Titanate Thin Film on Titanium Metal Substrate by Hydrothermal‐Electrochemical Method

Seung Eul Yoo
, Motoo Hayashi
, Nobuo Ishizawa
, Masahiro Yoshimura

材料科學及工程學系

研究成果: Article › 同行評審

74 引文斯高帕斯（Scopus）

摘要

Polycrystalline SrTiO₃ thin films have been prepared on Timetal substrates by the hydrothermal‐electrochemical method. The films were prepared at temperatures ranging from 100° to 200°C and under saturated vapor pressures in electrolytic solutions of 1N to 5N Sr(OH)₂. A galvanostat was used to apply a direct current of 5 to 25 mA/cm². The films had smooth and homogeneous surfaces without any visible pores or defects. The dielectric constant of the films was approximately 129 assuming 25 nm for film thickness.

原文	English
頁（從 - 到）	2561-2563
頁數	3
期刊	Journal of the American Ceramic Society
卷	73
發行號	8
DOIs	https://doi.org/10.1111/j.1151-2916.1990.tb07637.x
出版狀態	Published - 1990 8月

All Science Journal Classification (ASJC) codes

陶瓷和複合材料
材料化學

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10.1111/j.1151-2916.1990.tb07637.x

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引用此

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abstract = "Polycrystalline SrTiO3 thin films have been prepared on Timetal substrates by the hydrothermal‐electrochemical method. The films were prepared at temperatures ranging from 100° to 200°C and under saturated vapor pressures in electrolytic solutions of 1N to 5N Sr(OH)2. A galvanostat was used to apply a direct current of 5 to 25 mA/cm2. The films had smooth and homogeneous surfaces without any visible pores or defects. The dielectric constant of the films was approximately 129 assuming 25 nm for film thickness.",

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language = "English",

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AU - Yoo, Seung Eul

AU - Hayashi, Motoo

AU - Ishizawa, Nobuo

AU - Yoshimura, Masahiro

PY - 1990/8

Y1 - 1990/8

N2 - Polycrystalline SrTiO3 thin films have been prepared on Timetal substrates by the hydrothermal‐electrochemical method. The films were prepared at temperatures ranging from 100° to 200°C and under saturated vapor pressures in electrolytic solutions of 1N to 5N Sr(OH)2. A galvanostat was used to apply a direct current of 5 to 25 mA/cm2. The films had smooth and homogeneous surfaces without any visible pores or defects. The dielectric constant of the films was approximately 129 assuming 25 nm for film thickness.

AB - Polycrystalline SrTiO3 thin films have been prepared on Timetal substrates by the hydrothermal‐electrochemical method. The films were prepared at temperatures ranging from 100° to 200°C and under saturated vapor pressures in electrolytic solutions of 1N to 5N Sr(OH)2. A galvanostat was used to apply a direct current of 5 to 25 mA/cm2. The films had smooth and homogeneous surfaces without any visible pores or defects. The dielectric constant of the films was approximately 129 assuming 25 nm for film thickness.

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JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

IS - 8

ER -

Preparation of Strontium Titanate Thin Film on Titanium Metal Substrate by Hydrothermal‐Electrochemical Method

摘要

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