Preparation of tungsten oxide nanowires from sputter-deposited WC x films using an annealing/oxidation process

Shui Jinn Wang, Chao Hsuing Chen, Rong Ming Ko, Yi Cheng Kuo, Chin Hong Wong, Chien Hung Wu, Kai Ming Uang, Tron Min Chen, Bor Wen Liou

研究成果: Article同行評審

32 引文 斯高帕斯(Scopus)

摘要

The self-synthesis of tungsten oxide (W18 O49) nanowires on sputter-deposited W Cx films using a simple annealing/oxidization process was reported. It was found that thermal annealing of W Cx films at 680 °C for 30 min in nitrogen followed by oxidation at 450 °C for 30 min in pure oxygen would yield dense and well-crystallized monoclinic W18 O49 (010) nanowires with a typical length/diameter of about 0.15-0.2 μm10-20 nm. The formation of W18 O49 nanowires is attributed to the nuclei of immature W2 C nanowires experiencing a regrowth process, accompanied by carbon depletion and the oxidization of tungsten during the subsequent oxidization process.

原文English
文章編號263103
頁(從 - 到)1-3
頁數3
期刊Applied Physics Letters
86
發行號26
DOIs
出版狀態Published - 2005 六月 27

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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