Pressure and UV light sensitive electron field emission properties of lateral ZnO nanowires with an emitter-to-emitter configuration

Wen I. Hsu, Shui-Jinn Wang, Wei Chih Tsai, Chih R. Tseng, Wen C. Hsu

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, This study demonstrates the synthesis of lateral zinc oxide nanowires (ZnO NWs) with an emitter-to-emitter configuration on a simple Pt/AZO bi-layer structure by hydrothermal synthesis (HTS) method and presents their superior electron field emission (FE) characteristics and pressure/UV light (254, 366 nm) sensing properties. The highly sensitive response to both pressure and UV illumination is attributed to the use of an emitter-to-emitter configuration with short interelectrode spacing as well as the good crystal quality of the lateral ZnO NWs. Experimental results presented in this work indicate that the lateral ZnO NWs can be a potential candidate for devices applications of gas, pressure, and UV light sensors.

原文English
主出版物標題67th Device Research Conference, DRC 2009
頁面125-126
頁數2
DOIs
出版狀態Published - 2009 十二月 11
事件67th Device Research Conference, DRC 2009 - University Park, PA, United States
持續時間: 2009 六月 222009 六月 24

出版系列

名字Device Research Conference - Conference Digest, DRC
ISSN(列印)1548-3770

Other

Other67th Device Research Conference, DRC 2009
國家/地區United States
城市University Park, PA
期間09-06-2209-06-24

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程

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