Pressure dependence of positron lifetimes in V3Si

P. Sen, J. D. McGervey, C. Knox, C. W. Chu

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

We have measured positron lifetimes in V3Si at hydrostatic pressures of 0 to 20 kb, at room temperature. The lifetimes were independent of pressure, within the experimental uncertainty of ± 2 ps; the results of eight measurements all were between 129 and 133 ps.

原文English
頁(從 - 到)393-394
頁數2
期刊Physics Letters A
63
發行號3
DOIs
出版狀態Published - 1977 十一月 14

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

指紋

深入研究「Pressure dependence of positron lifetimes in V<sub>3</sub>Si」主題。共同形成了獨特的指紋。

引用此