Pressure effect on the metal-semiconductor transition in 1-T TaS2

C. W. Chu; S. Huang; P. D. Hambourger; A. H. Thompson

doi:10.1016/0375-9601(71)90761-4

Pressure effect on the metal-semiconductor transition in 1-T TaS₂

C. W. Chu, S. Huang, P. D. Hambourger, A. H. Thompson

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12 引文斯高帕斯（Scopus）

摘要

It is found that the metal-semiconductor transition in the 1-T TaS₂ is suppressed linearly by compression up to ∼ 15 kbar with dT_o/dP = - (3.0±0.2) K/kbar. A two-band model with a small but temperature- and pressure-dependent overlap is proposed.

原文	English
頁（從 - 到）	93-94
頁數	2
期刊	Physics Letters A
卷	36
發行號	2
DOIs	https://doi.org/10.1016/0375-9601(71)90761-4
出版狀態	Published - 1971 8月 16

All Science Journal Classification (ASJC) codes

一般物理與天文學

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10.1016/0375-9601(71)90761-4

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引用此

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abstract = "It is found that the metal-semiconductor transition in the 1-T TaS2 is suppressed linearly by compression up to ∼ 15 kbar with dTo/dP = - (3.0±0.2) K/kbar. A two-band model with a small but temperature- and pressure-dependent overlap is proposed.",

author = "Chu, {C. W.} and S. Huang and Hambourger, {P. D.} and Thompson, {A. H.}",

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AU - Hambourger, P. D.

AU - Thompson, A. H.

PY - 1971/8/16

Y1 - 1971/8/16

N2 - It is found that the metal-semiconductor transition in the 1-T TaS2 is suppressed linearly by compression up to ∼ 15 kbar with dTo/dP = - (3.0±0.2) K/kbar. A two-band model with a small but temperature- and pressure-dependent overlap is proposed.

AB - It is found that the metal-semiconductor transition in the 1-T TaS2 is suppressed linearly by compression up to ∼ 15 kbar with dTo/dP = - (3.0±0.2) K/kbar. A two-band model with a small but temperature- and pressure-dependent overlap is proposed.

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Pressure effect on the metal-semiconductor transition in 1-T TaS2

摘要

All Science Journal Classification (ASJC) codes

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Pressure effect on the metal-semiconductor transition in 1-T TaS₂