Pressure effect on the metal-semiconductor transition in 1-T TaS2

C. W. Chu, S. Huang, P. D. Hambourger, A. H. Thompson

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

It is found that the metal-semiconductor transition in the 1-T TaS2 is suppressed linearly by compression up to ∼ 15 kbar with dTo/dP = - (3.0±0.2) K/kbar. A two-band model with a small but temperature- and pressure-dependent overlap is proposed.

原文English
頁(從 - 到)93-94
頁數2
期刊Physics Letters A
36
發行號2
DOIs
出版狀態Published - 1971 8月 16

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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