摘要
It is found that the metal-semiconductor transition in the 1-T TaS2 is suppressed linearly by compression up to ∼ 15 kbar with dTo/dP = - (3.0±0.2) K/kbar. A two-band model with a small but temperature- and pressure-dependent overlap is proposed.
原文 | English |
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頁(從 - 到) | 93-94 |
頁數 | 2 |
期刊 | Physics Letters A |
卷 | 36 |
發行號 | 2 |
DOIs | |
出版狀態 | Published - 1971 8月 16 |
All Science Journal Classification (ASJC) codes
- 一般物理與天文學