TY - JOUR
T1 - Pressure effect on the metal-semiconductor transition in 1-T TaS2
AU - Chu, C. W.
AU - Huang, S.
AU - Hambourger, P. D.
AU - Thompson, A. H.
N1 - Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 1971/8/16
Y1 - 1971/8/16
N2 - It is found that the metal-semiconductor transition in the 1-T TaS2 is suppressed linearly by compression up to ∼ 15 kbar with dTo/dP = - (3.0±0.2) K/kbar. A two-band model with a small but temperature- and pressure-dependent overlap is proposed.
AB - It is found that the metal-semiconductor transition in the 1-T TaS2 is suppressed linearly by compression up to ∼ 15 kbar with dTo/dP = - (3.0±0.2) K/kbar. A two-band model with a small but temperature- and pressure-dependent overlap is proposed.
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U2 - 10.1016/0375-9601(71)90761-4
DO - 10.1016/0375-9601(71)90761-4
M3 - Article
AN - SCOPUS:26644464406
VL - 36
SP - 93
EP - 94
JO - Physics Letters, Section A: General, Atomic and Solid State Physics
JF - Physics Letters, Section A: General, Atomic and Solid State Physics
SN - 0375-9601
IS - 2
ER -