Primary defects in low-fluence ion-implanted silicon

研究成果: Article同行評審

20 引文 斯高帕斯(Scopus)

摘要

Electrical defect energy levels created by low-fluence ionic impact were investigated using transient capacitance spectroscopy. The ion species used are 1H+, 2H+2, 4He+, 11B+, and 31P +. The defect levels were identified by comparing these levels with those obtained in electron-irradiated structures. The defect production yields for various ion species and for different fluences were obtained. Only a small fraction of the carrier removal could be accounted for by the observed DLTS levels.

原文English
頁(從 - 到)48-50
頁數3
期刊Applied Physics Letters
36
發行號1
DOIs
出版狀態Published - 1980

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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